Display Storage Capacitor Layout for Stable Transistor Voltage

The patent combines the storage capacitor electrode with the gate electrode structure, where the gate electrode serves dual functions as both the gate control electrode and one electrode of the storage capacitor. This merging reduces the total number of separate electrodes and capacitors needed, thereby controlling device complexity while maintaining precise control capability through the integrated structure.

The gate electrode is designed to perform multiple functions: it acts as the gate control electrode for transistor operation and simultaneously serves as one electrode of the storage capacitor. This multi-functionality eliminates the need for separate dedicated capacitor electrodes, reducing overall device complexity while preserving the ability to accurately control light emission through both transistor gating and capacitor voltage storage.

By merging the gate electrode and storage capacitor electrode into a single structure, the patent reduces the total number of active components that would otherwise consume power. The integrated design minimizes the number of separate transistor-gate-capacitor units needed, thereby reducing overall power consumption while maintaining the voltage storage capability required for stable display quality.

The patent optimizes the capacitance value by integrating the storage capacitor with the gate electrode, achieving sufficient voltage storage with a smaller effective capacitor size. This parameter optimization allows the display to maintain high quality through stable voltage storage while consuming less power compared to traditional designs with separate, larger dedicated capacitor structures.

The patent merges the storage capacitor electrode with the gate electrode, creating an integrated structure that achieves sufficient capacitor capacity without requiring additional separate capacitor components. This merging maintains manufacturing simplicity by using the existing gate electrode fabrication process while simultaneously providing adequate voltage storage capacity to stabilize transistor operation.

The patent increases the effective capacitor capacity by utilizing the overlapping area between the gate electrode and the lower electrode in a vertical stacking arrangement. This dimensional approach allows the capacitor to achieve sufficient capacity for voltage stabilization without expanding the planar footprint or adding complex multi-layer capacitor structures, thus maintaining manufacturing simplicity while improving voltage stability.