Display Transistor Channel Doping to Minimize Hysteresis
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Solution Overview
Problem
Modern display devices face challenges in minimizing hysteresis and unwanted instant afterimages in transistors, which affect the overall performance and image quality.
Innovation Solution
The display device incorporates a semiconductor layer with specific impurity ions, where the channel of the first transistor includes both a group-III element like boron and a group-V element like phosphorus, while the channel of the second transistor includes only one of these impurities. Additionally, the second transistor's channel is treated with hydrogen plasma to enhance hydrogen content.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the channel is doped with a single type of impurity ion, then the manufacturing process is simple, but hysteresis and instant afterimages occur in the transistor
Solution Approach 1:
The patent applies local quality by differentiating the doping composition between two transistor channels. The first transistor channel receives both first impurity ions (e.g., boron) and second impurity ions (e.g., phosphorus), while the second transistor channel receives only first impurity ions. This localized differentiation eliminates hysteresis and instant afterimages in the first transistor without unnecessarily complicating the second transistor, thus resolving the contradiction between reliability improvement and manufacturing complexity.
Solution Approach 2:
The patent employs parameter changes by varying the doping concentration and type parameters in different transistor channels. By adjusting the impurity ion composition (presence/absence of second impurity ions) and controlling doping concentrations, the patent optimizes transistor electrical characteristics to eliminate hysteresis and instant afterimages, while managing the complexity through controlled parameter variations rather than fundamental process changes.
2Reliability
If dual impurity ions are doped in the first transistor channel, then hysteresis and instant afterimages are minimized, but the manufacturing process becomes more complex
Solution Approach 1:
The patent implements local quality by applying dual impurity ion doping selectively only to the first transistor channel that requires it for optimal performance, while the second transistor channel uses single impurity ion doping. This localized approach minimizes hysteresis and instant afterimages where needed without universally complicating the manufacturing process across all transistors, thereby balancing reliability improvement with ease of manufacture.
Solution Approach 2:
The patent applies segmentation by dividing the doping process into distinct stages and regions. The first transistor channel undergoes a two-stage doping process (first impurity ions followed by second impurity ions), while the second transistor channel undergoes a simpler single-stage doping process. This segmented approach allows differential treatment of transistor channels, achieving superior switching characteristics in the first transistor without unnecessarily increasing overall manufacturing complexity.
3Reliability
If hydrogen plasma treatment is applied to the second transistor channel, then hydrogen content increases improving switching characteristics, but the process time increases
Solution Approach 1:
The patent applies preliminary action by performing hydrogen plasma treatment on the second transistor channel at an optimized early stage in the manufacturing process. This timing allows the hydrogen content to be enhanced when it most effectively improves switching characteristics, while minimizing the cumulative processing time by consolidating the plasma treatment step rather than repeating it multiple times or performing it at less optimal stages.
Solution Approach 2:
The patent employs parameter changes by optimizing the hydrogen plasma treatment parameters (power, gas flow rate, treatment duration) to achieve the desired hydrogen content enhancement in the second transistor channel with minimal processing time. By adjusting these parameters, the patent balances the improvement in switching characteristics against the loss of processing time, finding an optimal operating point that satisfies both requirements.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration minimizes hysteresis and instant afterimages, improving the switching characteristics and image quality of the display device.
Implementation Method 1
The channel of the second transistor may be treated with hydrogen plasma
Implementation Method 2
A hydrogen content of the channel of the second transistor may be greater than that of the channel of the first transistor
Implementation Method 3
Each of the channel of the first transistor and the channel of the second transistor comprises a first impurity ion. The channel of the first transistor further comprises a second impurity ion different from the first impurity ion
Data Source
AI summary
A display device includes a substrate, a semiconductor layer, an insulating layer, and a conductive layer. The semiconductor layer is disposed on the substrate, includes a channel of a first transistor, and includes a channel of a second transistor. The insulating layer is disposed on the semiconductor layer. The conductive layer is disposed on the insulating layer, includes a gate electrode of the first transistor, and includes a gate electrode of the second transistor. The channel of the first transistor includes a first first-element impurity ion and a second-element impurity ion different from the first first-element impurity ion. The channel of the second transistor includes a second first-element impurity ion identical to the first first-element impurity ion.