Semiconductor Display Device Circuit Segmentation
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Solution Overview
Problem
The existing semiconductor display devices face challenges in achieving high-speed operation and high withstand voltage without complicating the manufacturing process, leading to increased power consumption and reduced area efficiency due to the need for a unified process for both high-speed and high-withstand voltage semiconductor elements.
Innovation Solution
The use of semiconductor materials with wider bandgaps, such as oxide semiconductors, silicon carbide, and gallium nitride, allows for the separation of circuit design based on voltage requirements, enabling high-speed operation for low-withstand voltage circuits and high-withstand voltage for intermediate voltage circuits, thereby simplifying the manufacturing process.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the thickness of gate insulating films is increased to achieve high withstand voltage, then the withstand voltage is improved, but the operation speed deteriorates
Solution Approach 1:
The driver circuit is divided into two separate circuits: a first circuit using oxide semiconductor for high-withstand-voltage portions and a second circuit using crystalline silicon for high-speed operation portions. This segmentation allows each circuit to be optimized for its specific function without compromise
Solution Approach 2:
Different semiconductor materials are used in different locations within the driver circuit system. Oxide semiconductor is used specifically where high withstand voltage is needed, while crystalline silicon is used where high-speed operation is critical, giving each location the appropriate material properties
2Area of stationary object
If the area of driver circuit is reduced by miniaturizing semiconductor elements, then the area efficiency is improved, but the power consumption increases
Solution Approach 1:
The driver circuit is segmented into oxide semiconductor-based and crystalline silicon-based circuits, allowing the high-speed crystalline silicon portion to be miniaturized for area efficiency while the oxide semiconductor portion handles voltage-level functions that consume less power
Solution Approach 2:
The invention changes the material parameter (semiconductor type) to optimize the balance between area and power consumption. Crystalline silicon enables miniaturization for area efficiency, while oxide semiconductor provides high withstand voltage with lower leakage current, reducing power consumption
3Device complexity
If different structures are manufactured through the same process, then the manufacturing complexity increases, but the yield decreases
Solution Approach 1:
The manufacturing process is segmented into separate processes for oxide semiconductor and crystalline silicon, with each process optimized for its specific material. This avoids the need to manufacture different structures through a single unified process, maintaining high yield for each material type
Solution Approach 2:
Each semiconductor material serves multiple functions within its optimized process framework. The oxide semiconductor process handles both high-withstand-voltage requirements and low-power operations, while the crystalline silicon process handles high-speed operations, allowing each process to be universally applied to its designated circuit type
Data Source
AI summary
A semiconductor display device comprising a pixel portion and a signal line driver circuit comprising a first circuit, a second circuit configured to control timing of the sampled serial video signals by the first circuit, and a third circuit configured to perform signal processing on the parallel video signals, wherein the second circuit comprises a first semiconductor element formed over a first substrate, the first semiconductor element including a first semiconductor layer, wherein the third circuit comprises a second semiconductor element formed over a second substrate, the second semiconductor element including a second semiconductor layer, wherein the pixel portion comprises a third semiconductor element formed over the second substrate, the third semiconductor element including a third semiconductor layer, wherein the first semiconductor layer comprises silicon or germanium, and wherein each the second semiconductor layer and the third semiconductor layer has a wider bandgap than the first semiconductor layer.