Display Color Conversion Layer Formation Without LED Chip Transfer
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Solution Overview
Problem
The challenge lies in manufacturing high-resolution display apparatuses with small pixel sizes, where compact LED chips need to be accurately positioned, and existing methods face difficulties in transferring and patterning small-sized LED chips efficiently, leading to reduced light efficiency and accuracy in color conversion.
Innovation Solution
A method involving the formation of a color conversion layer within the display apparatus using light emission, where an emissive layer, driving layer, and exposure lines are used to harden color conversion materials, eliminating the need for chip transfer and enhancing light efficiency by monolithic formation of pixels.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If compact LED chips are used to achieve high-resolution display, then pixel density is improved, but transfer accuracy and positioning precision deteriorate
Solution Approach 1:
The patent replaces the mechanical transfer process with a direct growth approach. Instead of transferring compact LED chips mechanically (which causes positioning errors), the invention grows the light-emitting structure directly on the substrate using sequential epitaxial growth, eliminating the transfer step entirely and achieving high pixel density without transfer accuracy limitations
Solution Approach 2:
The patent employs self-aligned growth where the light-emitting structure automatically forms at the correct positions through the epitaxial process. The growth process itself defines the pixel locations and boundaries, making the system self-positioning and eliminating the need for external transfer alignment processes
2Ease of manufacture
If chip transfer technique is used to arrange LED chips, then device assembly is simplified, but light efficiency deteriorates due to transfer losses and imperfect contact
Solution Approach 1:
The patent merges the light-emitting function and color conversion function into a single integrated structure. The wavelength conversion layer is grown directly on the light-emitting structure in a monolithic configuration, eliminating the need for separate chip transfer and attachment processes, thereby preserving light efficiency while maintaining manufacturing simplicity
Solution Approach 2:
The patent replaces the mechanical chip transfer and attachment system with a direct epitaxial growth system. The light-emitting structure and wavelength conversion layer are formed in-situ through sequential growth, eliminating mechanical interfaces that would otherwise cause light loss, while the entire process remains compatible with standard semiconductor manufacturing
3Adaptability or versatility
If separate formation of light-emitting structure and color conversion layer is used, then manufacturing flexibility is improved, but manufacturing complexity deteriorates due to multiple transfer steps
Solution Approach 1:
The patent performs preliminary formation of the light-emitting structure through epitaxial growth before forming the wavelength conversion layer. This sequential approach allows each layer to be optimized independently while being formed in a unified process flow, maintaining flexibility in material selection and layer design while reducing overall process complexity compared to separate transfer operations
Solution Approach 2:
The patent employs a universal epitaxial growth process that can form both the light-emitting structure and the wavelength conversion layer using the same equipment and methodology. This multi-functional approach maintains manufacturing flexibility for different material systems and device configurations while simplifying the overall manufacturing process by eliminating the need for multiple specialized transfer tools and procedures
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach allows for the efficient manufacturing of high-resolution display apparatuses with increased light efficiency and accurate color conversion without the need for chip transfer, improving the aperture ratio and contrast by directly forming color conversion layers using light emission, thus overcoming the limitations of existing methods.
Implementation Method 1
applying a signal to the emissive layer to emit light
Implementation Method 2
forming a color conversion layer by hardening a portion of the color conversion material that overlaps the light-emission area based on the signal applied to the emissive layer
Data Source
AI summary
Provided are a method of manufacturing a display apparatus and the display apparatus. The method includes forming an emissive layer and a driving layer on a first area of a substrate, forming an exposure line electrically connected to the driving layer, on a second area of the substrate, and forming a color conversion layer on the driving layer by emitting light from the emissive layer using the exposure line.