Overlapping Capacitor Layout for Display Dehydrogenation Paths
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Solution Overview
Problem
Current display devices face challenges in achieving high-resolution and reliable performance due to limitations in semiconductor layer design, particularly in providing an effective dehydrogenation path, which affects display quality and reliability.
Innovation Solution
The proposed display device incorporates a substrate with a semiconductor layer, gate electrodes, storage electrodes, and capacitors configured to form overlapping capacitors, including a storage capacitor and a hold capacitor, with specific openings to facilitate a dehydrogenation path, enhancing the semiconductor layer's functionality and improving display performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the semiconductor layer is designed with traditional single-capacitor structure, then the device complexity is low, but the display quality and reliability are insufficient
Solution Approach 1:
The patent combines a storage capacitor and a hold capacitor into a single integrated capacitor structure. The storage capacitor is formed between the gate electrode and the first electrode, while the hold capacitor is formed between the gate electrode and the second electrode. Both capacitors share the same gate electrode and overlapping region, merging multiple capacitor functions into one structural unit, thereby improving display quality and reliability without proportionally increasing device complexity.
Solution Approach 2:
The patent utilizes the vertical dimension by forming overlapping capacitors in the thickness direction of the substrate. The first electrode and second electrode are positioned at different heights above the gate electrode, creating vertical stacking of capacitor structures. This three-dimensional arrangement allows multiple capacitor functions to coexist in a limited planar area, enhancing reliability without significantly increasing the device footprint.
2Reliability
If the semiconductor layer lacks dehydrogenation paths, then the manufacturing process is simple, but the display quality and reliability deteriorate
Solution Approach 1:
The patent segments the capacitor structure by introducing first and second electrodes positioned at different locations. These segmented electrode structures create multiple dehydrogenation paths through the semiconductor layer, allowing hydrogen to escape through different routes. The segmentation of the capacitor into storage and hold functions also enables independent optimization of each capacitor's dehydrogenation characteristics.
Solution Approach 2:
The first electrode and second electrode act as intermediary structures that facilitate dehydrogenation. These electrodes serve dual purposes: they form the capacitor structures necessary for display operation, and simultaneously provide pathways for hydrogen to escape from the semiconductor layer. The intermediary electrode structures bridge the functional requirement of capacitance and the reliability requirement of dehydrogenation.
3Manufacturing precision
If the capacitor structure uses overlapping electrodes in perpendicular direction, then the display resolution is improved, but the device complexity increases
Solution Approach 1:
The gate electrode serves multiple functions simultaneously: it acts as one electrode for the storage capacitor, another electrode for the hold capacitor, and provides the gating function for the transistor. The first electrode and second electrode both serve as capacitor electrodes and simultaneously create dehydrogenation paths. This multi-functionality reduces the need for additional separate structures, allowing high-resolution overlapping capacitor design without proportionally increasing device complexity.
Data Source
AI summary
A display device including a substrate, a first semiconductor layer disposed on the substrate, a first gate electrode disposed on the first semiconductor layer, a first storage electrode overlapping at least a portion of the first gate electrode and forming a first capacitor with the first gate electrode, and a first electrode disposed on the first storage electrode and forming a second capacitor together with the first storage electrode. The first storage electrode includes a first opening, the first electrode includes a second opening, and the first opening and the second opening overlap each other.