Display Device Dielectric Patterning via Black Matrix Mask
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Solution Overview
Problem
Display devices with silicon nitride gate and passivation layers suffer from reduced light transmittance due to light reflection, which affects their performance.
Innovation Solution
A method of manufacturing a display device that includes forming a gate line, data line, and thin film transistor on a substrate, followed by creating a black matrix pattern using ultraviolet light and using it as an etching mask to form dielectric patterns, thereby improving light transmittance by optimizing the structure and materials used.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If silicon nitride gate dielectric layer and passivation layer are used, then device reliability and protection are improved, but light transmittance deteriorates due to reflection
Solution Approach 1:
The patent removes the silicon nitride passivation layer from regions where light transmittance is critical, extracting the light-blocking function from this material layer. The gate dielectric layer is also selectively removed or thinned in specific areas to reduce reflection while maintaining device protection in other regions.
Solution Approach 2:
The patent applies different material compositions and thicknesses to different regions of the display device. The gate dielectric layer has varying thickness or material composition across different areas to optimize both protection and light transmittance locally, rather than using a uniform structure throughout.
2Illumination intensity
If black matrix layer is formed to block light in non-pixel areas, then display contrast is improved, but manufacturing complexity increases due to additional patterning steps
Solution Approach 1:
The patent combines the black matrix formation process with existing dielectric layer patterning steps. The black matrix is integrated into the same manufacturing sequence as the gate and data line structures, merging multiple functions into a unified process flow that reduces overall manufacturing complexity.
Solution Approach 2:
The patent uses a single dielectric layer structure that serves multiple functions: as an insulating layer, as a reflective control layer, and as a base for the black matrix pattern. This multi-functional approach eliminates the need for separate dedicated layers, simplifying the manufacturing process.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method enhances light transmittance by reducing the coverage of light-blocking materials, resulting in improved display device performance.
Implementation Method 1
radiating ultraviolet light on a second surface of the substrate opposing the first surface, the ultraviolet light developing exposed parts of the black matrix layer to form a black matrix pattern
Implementation Method 2
etching the first dielectric layer using the black matrix pattern as an etching mask to respectively form a first dielectric pattern on the gate line and a gate dielectric pattern on the gate electrode
Data Source
AI summary
A method of manufacturing a display device, the method including: forming, on a first surface of a substrate, a gate line and a gate electrode; forming a first dielectric layer on the gate line and the gate electrode; forming a data line, a source electrode and a drain electrode on the first dielectric layer; forming a black matrix layer on the first dielectric layer, the data line, the source electrode, and the drain electrode; radiating ultraviolet light on a second surface of the substrate opposing the first surface, the ultraviolet light developing exposed parts of the black matrix layer to form a black matrix pattern; and etching the first dielectric layer using the black matrix pattern as an etching mask to respectively form a first dielectric pattern on the gate line and a gate dielectric pattern on the gate electrode.