Display Device Mask Process Reduction via Unified Electrode Structure
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Solution Overview
Problem
The existing display device manufacturing processes are inefficient due to the increasing number of mask processes required, leading to increased costs and decreased reliability of wire pads, particularly because the conductive layer forming the wire pad is often in direct contact with reactive materials.
Innovation Solution
A display device structure where the gate electrode and transistor electrodes are formed using the same mask process, and a conductive capping layer on the second conductive layer serves as the contact electrode for wire pads, reducing the need for additional mask processes and preventing direct contact with reactive materials.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If multiple mask processes are used for patterning wires and insulating films, then manufacturing precision is improved, but process complexity and cost increase
Solution Approach 1:
The patent combines the gate electrode and transistor electrodes into a single conductive layer that is patterned using one mask process. This merging of multiple patterning steps into a single step reduces process complexity while maintaining the required manufacturing precision for both the gate and transistor electrodes.
Solution Approach 2:
The conductive layer serves multiple functions simultaneously: it forms both the gate electrode and the transistor electrodes (source and drain). This multi-functionality eliminates the need for separate mask processes for each electrode type, thereby reducing overall process complexity while achieving precise patterning.
2Manufacturing precision
If multiple mask processes are used for patterning, then manufacturing precision is improved, but productivity decreases
Solution Approach 1:
By merging the patterning of gate electrodes and transistor electrodes into a single mask process, the patent reduces the total number of processing steps required. This directly improves productivity and process efficiency while still achieving the necessary patterning precision through the unified mask design.
3Ease of manufacture
If wire pads are formed with conductive layer in direct contact with reactive materials, then ease of manufacture is improved, but reliability deteriorates
Solution Approach 1:
The patent introduces an insulating film as an intermediary layer between the conductive layer (wire pad) and reactive materials. This insulating film acts as a protective barrier that prevents direct contact between the conductive layer and reactive substances, thereby improving wire pad reliability while maintaining ease of manufacture through the integrated structure.
4Manufacturing precision
If additional mask processes are used for wire pad contact electrodes, then manufacturing precision is improved, but device complexity increases
Solution Approach 1:
The patent merges the formation of wire pad contact electrodes with the existing conductive layer structure. The conductive layer itself serves as the contact electrode for wire pads, eliminating the need for additional mask processes and reducing structural complexity while maintaining precise electrical connections.
Solution Approach 2:
The conductive layer performs multiple functions: it serves as both the transistor electrodes (gate, source, drain) and as the wire pad contact electrodes. This multi-functionality eliminates the need for separate contact electrode structures, thereby reducing device complexity while achieving precise electrical connections for wire pads.
Data Source
AI summary
A display device includes a substrate, a first conductive layer on the substrate, the first conductive layer including a data signal line, a first insulating layer on the first conductive layer, a semiconductor layer on the first insulating layer, the semiconductor layer including a first semiconductor pattern, a second insulating layer on the semiconductor layer, and a second conductive layer on the second insulating layer, the second conductive layer including a gate electrode disposed to overlap the first semiconductor pattern, a transistor first electrode disposed to overlap a part of the first semiconductor pattern, wherein the transistor first electrode is electrically connected to the data signal line through a contact hole that penetrates the first and second insulating layers, and a transistor second electrode disposed to overlap another part of the first semiconductor pattern.