Semiconductor device and electronic device
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Solution Overview
Problem
Existing semiconductor devices lack the ability to dynamically change the orientation of their displays, such as from portrait to landscape mode, and suffer from issues like transistor characteristic degradation, reduced operation speed, and dielectric breakdown.
Innovation Solution
A semiconductor device is designed with a novel structure comprising multiple transistors and capacitors, allowing for the switching of display orientation by altering the potentials of specific wirings, which helps in suppressing transistor degradation, enhancing operation speed, and preventing dielectric breakdown.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If a shift register is mounted on a driver circuit for driving a semiconductor device with fixed display orientation, then the device can function with simple circuit structure, but the device cannot change display orientation between portrait and landscape modes
Solution Approach 1:
The patent applies dynamics by making the circuit configuration changeable through switching elements. The driver circuit can dynamically reconfigure its internal connections to support different display orientations (portrait and landscape modes) by activating different transistor pathways, transforming a static circuit into a dynamic one that adapts to different operational requirements.
Solution Approach 2:
The patent implements universality by designing a driver circuit that can perform multiple functions - driving displays in both portrait and landscape orientations using the same physical circuit. The circuit achieves multi-functionality through switching mechanisms that redirect signal paths based on the desired display orientation, eliminating the need for separate circuits for each mode.
2Reliability
If conventional transistor structures are used in driver circuits, then manufacturing is simplified, but transistor characteristics degrade over time leading to reduced operation speed and dielectric breakdown
Solution Approach 1:
The patent applies local quality by creating non-uniform doping profiles within the transistor structures. Specifically, different regions of the transistor have different doping concentrations - with higher doping near the interface to improve reliability and lower doping in other regions to maintain high operation speed. This localized variation in material properties allows simultaneous optimization of both reliability and performance.
Solution Approach 2:
The patent implements parameter changes by varying the doping concentration parameter throughout the transistor structure. By changing the doping level from region to region and from layer to layer, the patent optimizes electrical characteristics to prevent degradation while maintaining high-speed operation. This includes adjusting carrier concentration, mobility, and threshold voltage through controlled doping variations.
Data Source
AI summary
A semiconductor device or the like with a novel structure that can change the orientation of the display is provided. A semiconductor device or the like with a novel structure, in which a degradation in transistor characteristics can be suppressed, is provided. A semiconductor device or the like with a novel structure, in which operation speed can be increased, is provided. A semiconductor device or the like with a novel structure, in which a dielectric breakdown of a transistor can be suppressed, is provided. The semiconductor device or the like has a circuit configuration capable of switching between a first operation and a second operation by changing the potentials of wirings. By switching between these two operations, the scan direction is easily changed. The semiconductor device is configured to change the scan direction.