Display-Driving MOSFET Corner Cut for Gate Oxide Reliability
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Solution Overview
Problem
The ultra-miniaturization of semiconductor processes leads to thinner gate oxides, causing electric field concentration at the active corner of high-voltage MOSFET structures, which complicates leakage and breakdown voltage distribution, compromising reliability during TDDB testing.
Innovation Solution
Incorporating an active corner cut area with a right-angled triangle shape in the semiconductor device, specifically designed to block electric field concentration, thereby improving gate oxide thinning and enhancing breakdown voltage distribution characteristics.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Length of moving object
If ultra-miniaturization of semiconductor processes is implemented to reduce device size, then device dimensions are reduced, but gate oxide thinning is accelerated due to electric field concentration at the active corner
Solution Approach 1:
The patent applies asymmetry by introducing an active corner cut area with a right-angled triangle shape at the corner of the active region. This asymmetric modification removes the problematic corner point where electric field concentration occurs, thereby reducing gate oxide thinning while maintaining the overall device miniaturization benefits.
Solution Approach 2:
The patent applies local quality by modifying only the corner region of the active area while leaving the rest of the device structure unchanged. The active corner cut area is specifically positioned at the corner where the source/drain regions meet the gate, targeting the localized electric field concentration problem without affecting other device regions.
2Ease of manufacture
If conventional active corner structure is used in high-voltage MOSFET, then manufacturing is simplified, but leakage and breakdown voltage distribution characteristics become difficult to manage
Solution Approach 1:
The asymmetric active corner cut area with right-angled triangle shape modifies the corner geometry to eliminate electric field concentration points. This simple geometric modification can be integrated into existing manufacturing processes while significantly improving breakdown voltage distribution characteristics and reducing leakage.
Solution Approach 2:
The patent changes the geometric parameters of the active corner region by introducing a cut area with specific dimensions (right-angled triangle shape). This parameter change affects the electric field distribution, leading to improved breakdown voltage characteristics without fundamentally changing the manufacturing process.
Data Source
AI summary
A semiconductor device for driving a display according to the embodiment may include a first conductivity type base layer, a second conductivity type doping area on the first conductivity type base layer, a source area on the second conductivity type doping area, a drain area on the first conductivity type base layer, a gate insulating film disposed between the source area and the drain area, a gate electrode disposed on the gate insulating film and one or more device isolating areas disposed on the base layer. The active area including the second conductivity type doping area and the source area may include an active corner cut area in a corner area facing the drain area.