Peripheral Layer Structure for Display Edge Stress and Moisture Control
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Solution Overview
Problem
Existing electronic devices face challenges in improving structural reliability and display quality, particularly in the peripheral regions, due to issues such as moisture penetration and stress concentration.
Innovation Solution
The electronic device incorporates a planarization layer with openings and varying thickness alignment layers in the peripheral region, enhancing adhesion and stress buffering through a support member configuration that includes a first substrate, a second substrate, a support member, a planarization layer, and an alignment layer with specific thickness distributions.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the insulating layer is made continuous and thick to improve adhesion and protection, then reliability improves, but stress accumulation increases causing cracking in peripheral regions
Solution Approach 1:
The insulating layer is segmented into a first insulating layer and a second insulating layer with different material compositions and functions. The first insulating layer provides adhesion and basic insulation, while the second insulating layer provides enhanced stress resistance and moisture barrier properties, resolving the contradiction between adhesion and stress resistance
Solution Approach 2:
The patent uses composite material structure with the first insulating layer made of one material and the second insulating layer made of another material with different properties. This composite approach allows the system to simultaneously achieve good adhesion from the first layer and high stress resistance from the second layer
2Manufacturing precision
If the planarization layer is made continuous and thick to improve planarity and protection, then display quality improves, but moisture infiltration risk increases in peripheral regions
Solution Approach 1:
The planarization layer is segmented into a first planarization layer and a second planarization layer with different thicknesses and material properties. The first planarization layer provides basic planarity, while the second planarization layer provides enhanced moisture barrier properties in peripheral regions, resolving the contradiction between planarity and moisture protection
Solution Approach 2:
The second planarization layer is selectively positioned in peripheral regions where moisture infiltration risk is higher, providing local enhanced protection without compromising overall planarity. This local quality approach allows different regions to have different protection levels based on their specific requirements
3Reliability
If support members are positioned close to the edge to improve stress buffering, then structural reliability improves, but the insulating layer becomes more prone to cracking
Solution Approach 1:
The first insulating layer is positioned between the support member and the second insulating layer to beforehand cushion and absorb stress concentrated at the edge, preventing stress transmission to the second insulating layer and avoiding cracking while maintaining stress buffering functionality
Data Source
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AI summary
The electronic device includes a first substrate, a second substrate, a first support member, a planarization layer, and an alignment layer. The second substrate is opposite to the first substrate. The first support member is disposed in the peripheral region and located between the first substrate and the second substrate. The planarization layer is disposed on the first substrate and has a first portion and an opening. The first portion is disposed between the opening, and the first support member and the first portion are overlapped in a normal direction of the first substrate. The alignment layer is disposed on the planarization layer. The alignment layer on the first portion has a first thickness. The alignment layer in the opening has a second thickness. The first thickness is greater than or equal to zero and less than the second thickness.