Display Semiconductor Layout for Peripheral ESD Discharge

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Solution Overview

Problem

Electronic devices face damage from electrostatic discharge, which can cause electrostatic breakdown, dust absorption, and electromagnetic interference, and existing structural designs do not adequately address these issues for effective protection.

Innovation Solution

The electronic device incorporates a substrate with a display region and a peripheral region, featuring a first semiconductor element in the display region and a second semiconductor element in the peripheral region, where the second semiconductor element crosses the first wire in fewer parts than the first semiconductor element, creating a stronger electric field for electrostatic discharge protection.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If semiconductor elements are added to provide electrostatic discharge protection, then the protection capability is improved, but the device complexity increases

Engineering Contradiction:

Improveelectrostatic discharge protection capabilityVSAvoidstructure complexity

Core Design Contradiction:

ReliabilityVSDevice complexity

Solution Approach 1:

The second semiconductor element in the peripheral region is designed to serve dual purposes: it functions as part of the display device's operational circuitry while simultaneously serving as an electrostatic discharge protection element. This multi-functionality approach allows the same component to provide both operational functionality and ESD protection, thereby improving reliability without proportionally increasing device complexity.

Inventive Principle:

Principle #6Universality (Multi-functionality)

Solution Approach 2:

The patent places the second semiconductor element specifically in the peripheral region with different structural characteristics (crossing the wire in fewer parts) compared to elements in the display region. This local differentiation optimizes the ESD protection capability in specific areas where it is most needed, while maintaining the overall device functionality without uniformly increasing complexity across the entire device.

Inventive Principle:

Principle #3Local quality

2Reliability

If the second semiconductor element is designed with fewer crossing parts to accumulate static charges, then the electrostatic discharge protection is improved, but the manufacturing precision requirements increase

Engineering Contradiction:

Improveelectrostatic discharge protection effectVSAvoidstructural configuration precision

Core Design Contradiction:

ReliabilityVSManufacturing precision

Solution Approach 1:

The patent divides the semiconductor elements into two distinct groups based on their location and function: first semiconductor elements in the display region that cross the wire in multiple parts, and second semiconductor elements in the peripheral region that cross the wire in fewer parts. This segmentation allows each group to be optimized for its specific purpose while maintaining manufacturability through standardized fabrication processes.

Inventive Principle:

Principle #1Segmentation

Solution Approach 2:

The patent modifies the structural parameter of the semiconductor elements by changing the number of times they cross the wire, creating two distinct configurations. This parameter change enables the second element to have different electrical characteristics (better static charge accumulation) while still being manufacturable using the same base fabrication process, thus balancing protection effect with manufacturing precision requirements.

Inventive Principle:

Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This design effectively directs electrostatic discharge to the peripheral region, reducing the risk of damage to the display region by accumulating static charges more easily in the second semiconductor element, thereby enhancing the protection against electrostatic discharge.

Implementation Method 1

The energy generated during electrostatic discharge may cause damage to the electronic devices

Methodology Applied

Scientific EffectElectrostatic discharge: Electrostatic Discharge

Implementation Method 2

creating a stronger electric field for electrostatic discharge protection

Methodology Applied

Scientific EffectElectric field: Electric Field

Data Source

PatentUS11784182B2Electronic device

Publication Date: 2023.10.10 INNOLUX CORP

AI summary

An electronic device is provided. The electronic device includes a substrate, a first wire, a first semiconductor element and a second semiconductor element. The substrate has a display region and a peripheral region adjacent to the display region. The first wire is disposed in the display region and the peripheral region. The first semiconductor element is disposed in the display region. The second semiconductor element is disposed in the peripheral region and adjacent to the first semiconductor element. The first semiconductor element and the second semiconductor element cross the first wire in two parts respectively and the two parts of the second semiconductor element is less than the two parts of the first semiconductor element in distance.