Display Etch-Delaying Pattern for Single-Mask Depth Control
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Solution Overview
Problem
Current display device manufacturing processes face challenges in efficiently etching multiple areas with different etching depths without damaging underlying elements, often requiring multiple masks and leading to reduced manufacturing efficiency.
Innovation Solution
The use of an etch-delaying pattern, typically made of a different material such as molybdenum, which is disposed between the active pattern and the source metal pattern, allows for etching with a single mask by providing a different etching rate, thereby preventing damage to underlying elements and enhancing manufacturing efficiency.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If multiple masks are used to etch different areas with different etching depths, then etching precision is improved, but device complexity and manufacturing time increase
Solution Approach 1:
An etch-delaying pattern layer is introduced as an intermediary between the photoresist mask and the underlying inorganic layers. This pattern layer has selective etching resistance that allows different etching depths to be achieved in different regions using a single mask, eliminating the need for multiple masks while maintaining etching precision
Solution Approach 2:
The etch-delaying pattern layer changes the etching parameters (etching rate, etching depth) in different regions based on its presence or absence. By controlling the thickness and material composition of this pattern layer, precise control over etching depth is achieved without requiring multiple masking steps
2Manufacturing precision
If multiple masks are used to etch different areas with different etching depths, then etching precision is improved, but manufacturing efficiency decreases
Solution Approach 1:
Multiple etching operations that would normally require separate masking steps are merged into a single etching process. The etch-delaying pattern layer enables different etching depths to be achieved simultaneously in different regions using one mask and one etching step, significantly improving manufacturing efficiency
Solution Approach 2:
The etch-delaying pattern layer is formed in advance before the final etching step. This preliminary structure allows the etching process to automatically achieve different depths in different regions without requiring multiple sequential masking operations, streamlining the manufacturing process
3Ease of manufacture
If etching is performed without an etch-delaying pattern, then manufacturing process is simplified, but damage to underlying elements occurs
Solution Approach 1:
The etch-delaying pattern layer serves as a protective cushion layer that is removed in a controlled manner during etching. It prevents excessive etching that would damage the active pattern by providing a buffer that can be selectively removed, protecting underlying elements while allowing precise etching control
Solution Approach 2:
The etch-delaying pattern layer acts as an intermediary protective layer between the etching process and the active pattern. It mediates the etching process by being selectively removed to expose only the desired areas, preventing direct contact between the etching plasma and the active pattern, thus avoiding damage
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables precise etching with reduced risk of damage to the active pattern and increases manufacturing efficiency by allowing multiple etching areas to be processed with a single mask, improving the overall production process.
Implementation Method 1
The etch-delaying pattern...allows for etching with a single mask by providing a different etching rate
Data Source
AI summary
A display device includes a substrate, an active pattern disposed on the substrate, a gate electrode overlapping the active pattern, an inorganic insulation layer covering the active pattern, a source metal pattern and an etch-delaying pattern. The source metal pattern includes a first portion that is disposed on the inorganic insulation layer, and a second portion that passes through the inorganic insulation layer and electrically contacts the active pattern. The etch-delaying pattern is disposed between the active pattern and the first portion of the source metal pattern, contacts the second portion of the source metal pattern, and includes a different material from the inorganic insulation layer.