Display Gate Driver Layout With Through-Holes for Hydrogen Control
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Solution Overview
Problem
Hydrogen introduced during the stacking process of conductive or insulating materials can lead to variations in the semiconductor properties of transistors, causing threshold voltage fluctuations and degradation in display quality and lifespan.
Innovation Solution
The display device incorporates a circuit layer with through holes that facilitate the discharge of hydrogen, maintaining uniform output characteristics of stages by reducing hydrogen exposure, and includes a gate driver with shared lines to enhance symmetry and connectivity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If hydrogen is introduced during the stacking process of conductive or insulating materials, then the manufacturing process is simplified, but the semiconductor properties of transistors vary causing threshold voltage fluctuations
Solution Approach 1:
The patent extracts and removes hydrogen from the semiconductor structure by introducing through-holes that allow hydrogen to escape. The through-holes are formed in the gate insulating layer and extend into the semiconductor layer, providing a pathway for hydrogen to be extracted during or after the stacking process, thereby preventing hydrogen-induced threshold voltage variations while maintaining manufacturing simplicity.
2Reliability
If through holes are introduced to discharge hydrogen, then hydrogen residual amount is reduced, but the circuit layer structure becomes more complex
Solution Approach 1:
The through-holes serve multiple functions: they act as hydrogen discharge pathways to remove residual hydrogen, serve as etching blocking patterns to prevent further hydrogen penetration, and can be integrated with existing circuit structures. This multi-functionality reduces the need for separate components, thereby limiting the increase in structural complexity while achieving reliable hydrogen removal.
3Power
If gate driver includes multiple stages with transistors, then signal driving capability is enhanced, but hydrogen exposure causes output characteristic variations
Solution Approach 1:
The patent applies local quality by positioning through-holes specifically in regions where hydrogen accumulation is most problematic - namely in the gate insulating layer and semiconductor layer at the transistor active regions. This localized approach allows hydrogen removal where it causes threshold voltage variations while leaving other areas intact, maintaining the enhanced signal driving capability of multi-stage gate drivers without the harmful effects of hydrogen exposure.
Data Source
AI summary
A display device include a substrate comprising a display area having emission areas and a non-display area arranged around the display area, a circuit layer disposed on the substrate, light emitting elements disposed in the emission areas and disposed on the circuit layer, wherein the circuit layer comprises a light emitting pixel driver electrically connected to one of the light emitting elements, a set of gate lines connected to the light emitting pixel driver, and a gate driver supplying a set of gate signals to the set of gate lines, and wherein the gate driver comprises a first signal driver electrically connected to one of the set of gate lines, and first through holes disposed in the circuit layer, wherein the first through holes, when viewed in a plan view, are adjacent to one side of a first region where the first signal driver is disposed.