Display Transistor Gate Insulator Tuning for Wider Voltage Range
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Solution Overview
Problem
Current display devices face challenges in achieving a high resolution and high pixel per inch (PPI) display due to the limited driving voltage range of transistors, which increases with channel length but also increases transistor size, making it difficult to maintain a balance between voltage range and pixel size.
Innovation Solution
A display device design with a first transistor having a lower hydrogen concentration in its gate insulating layer compared to a second transistor, creating more electron traps and increasing the driving voltage range, while also ensuring a wider distance between the gate electrode and active layer for enhanced voltage range.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the channel length of the first transistor is increased to widen the driving voltage range, then the driving voltage range is improved, but the pixel size increases
Solution Approach 1:
The patent changes the physical and chemical parameters of the gate insulating layer, specifically controlling the hydrogen concentration to be lower in the first gate insulating layer compared to the second gate insulating layer. This parameter change creates additional electron traps that modify the electrical characteristics of the transistor, enabling a wider driving voltage range without increasing the channel length or pixel size.
2Reliability
If the channel length of the first transistor is increased to widen the driving voltage range, then the driving voltage range is improved, but the resolution and PPI decrease
Solution Approach 1:
By modifying the hydrogen concentration parameter in the gate insulating layer, the patent achieves wider driving voltage range while maintaining the original channel length. This allows the pixel dimensions to remain small, thereby preserving high resolution and high PPI characteristics of the display device.
3Reliability
If the distance between the gate electrode and the active layer is increased to widen the driving voltage range, then the driving voltage range is improved, but the device complexity increases
Solution Approach 1:
The patent applies local quality by creating a non-uniform hydrogen concentration distribution within the gate insulating layer. The first gate insulating layer has a lower hydrogen concentration than the second gate insulating layer, creating different local electrical properties that enable the desired voltage range expansion without requiring structural modifications or increased device complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively widens the driving voltage range of the first transistor, allowing for higher resolution and PPI displays without increasing transistor size, thereby improving display performance.
Implementation Method 1
A hydrogen concentration of the first gate insulating layer is lower than a hydrogen concentration of the second gate insulating layer
Data Source
AI summary
A display device includes: a substrate; a first active layer of a first transistor and a second active layer of a second transistor on the substrate; a first gate insulating layer on the first active layer; a first gate electrode on the first gate insulating layer; a second gate insulating layer on the second active layer; and a second gate electrode on the second gate insulating layer, wherein a hydrogen concentration of the first gate insulating layer is lower than a hydrogen concentration of the second gate insulating layer.