Display Substrate Gate Layout for Higher Aperture Ratio
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Solution Overview
Problem
Current display products face challenges in achieving high aperture ratios, which are essential for improving transmittance and reducing power consumption, especially as the demand for higher Pixels Per Inch (PPI) increases, leading to lower pixel aperture ratios and increased power consumption.
Innovation Solution
The design of a display substrate with optimized thin film transistors and structural elements, including specific dimensions and arrangements of gate electrodes, semiconductor layers, electrodes, and black matrices, to enhance the aperture ratio by minimizing the area of opaque components and maximizing the pixel opening area.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Illumination intensity
If the pixel aperture ratio is increased to improve transmittance, then the transmittance and light energy transmission are improved, but the area occupied by transparent components must be maximized which conflicts with the need to maintain sufficient opaque components for transistor functionality
Solution Approach 1:
The gate electrode is segmented into two distinct portions: a first portion that overlaps with the semiconductor layer to provide gating function, and a second portion that extends toward the electrode gap to provide shielding function. This segmentation allows each portion to be optimized independently for its specific function while contributing to the overall aperture ratio improvement.
Solution Approach 2:
Different portions of the gate electrode are designed with different widths and positions to serve different local functions. The first portion has sufficient width for effective gate control over the semiconductor layer, while the second portion is positioned and sized to provide electromagnetic shielding without excessively increasing the opaque area. This local differentiation optimizes both transistor performance and aperture ratio.
2Area of stationary object
If the opaque component area is reduced to increase aperture ratio, then transmittance is improved, but the transistor performance and light shielding capability may deteriorate
Solution Approach 1:
The gate electrode is divided into functional segments where the first portion ensures reliable transistor operation through proper overlap with the semiconductor layer, while the second portion provides light shielding. This segmentation allows the transistor performance requirements to be met by the first portion without requiring the entire gate structure to be large, thus enabling high aperture ratio while maintaining reliability.
Solution Approach 2:
The gate electrode structure serves multiple functions simultaneously: the first portion provides gate control for transistor switching, while the second portion provides electromagnetic shielding and light blocking. This multi-functionality allows a single component to address both transistor performance requirements and light management requirements, improving aperture ratio without sacrificing reliability.
3Area of stationary object
If the gate electrode structure is optimized for high aperture ratio with non-uniform width portions, then manufacturing precision requirements increase to maintain transistor characteristics
Solution Approach 1:
The gate electrode is segmented into two portions with clearly defined functional boundaries. The first portion's width is optimized for gate control, and the second portion's dimensions are optimized for shielding. This segmentation allows each portion to be independently optimized and controlled during manufacturing, reducing the overall manufacturing precision requirements compared to a uniformly complex gate structure.
Solution Approach 2:
The gate electrode employs an asymmetric design where the first and second portions have different widths and positions. This asymmetric configuration is deliberately designed to achieve the optimal balance between transistor performance and aperture ratio. The asymmetry is straightforward to implement in standard photolithography processes, avoiding the need for complex symmetric patterns that would require higher manufacturing precision.
Data Source
AI summary
The present disclosure provides a display substrate and a display device. The display substrate includes a base substrate; a plurality of thin film transistors on the base substrate, each thin film transistor including a gate electrode on the base substrate; a gate insulating layer on the gate electrode; a semiconductor layer on the gate insulating layer; and a first electrode and a second electrode on the semiconductor layer; wherein the gate electrode includes an inner portion and a peripheral portion, the peripheral portion including a first portion and a second portion, wherein an orthographic projection of the second portion on the base substrate is closer to an orthographic projection of an end of the gap on the base substrate than an orthographic projection of the first portion on the base substrate, and a width of the first portion is less than a width of the second portion.