Electroluminescent Display Hydrogen Trap Layer for Oxide TFT Reliability
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Solution Overview
Problem
Hydrogen inflow into oxide thin film transistors in electroluminescent display devices affects the control of on-voltage and off-voltage, compromising the reliability and characteristics of the thin film transistors.
Innovation Solution
A hydrogen trap layer made of aluminum is formed on the light emitting element to prevent hydrogen inflow into the oxide thin film transistor, utilizing its hydrogen trapping properties to enhance the reliability and characteristics of the thin film transistor.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a conventional structure without hydrogen trap layer is used, then the device structure is simpler and manufacturing is easier, but hydrogen inflow into the oxide thin film transistor occurs, compromising reliability and voltage control
Solution Approach 1:
A hydrogen trap layer is introduced as an intermediary component between the light emitting element and the oxide thin film transistor. This layer specifically traps hydrogen atoms, preventing them from reaching and degrading the transistor, thus resolving the contradiction by adding a targeted protective function without completely redesigning the device structure
Solution Approach 2:
The hydrogen trap layer is selectively positioned only in regions where hydrogen infiltration is most problematic, specifically near the oxide thin film transistor. This localized approach improves reliability where needed while minimizing the overall increase in device complexity
2Reliability
If no hydrogen trap layer is formed, then the manufacturing process is simpler and faster, but hydrogen inflow degrades the on-voltage and off-voltage control characteristics
Solution Approach 1:
The hydrogen trap layer is formed in advance during the manufacturing process, before the device is fully assembled and operational. This preliminary protective measure ensures that hydrogen is trapped from the outset, preventing future degradation of voltage control characteristics without requiring complex post-processing steps
Solution Approach 2:
The formation of the hydrogen trap layer involves adjusting deposition parameters such as thickness, material composition, and deposition conditions to optimize hydrogen trapping efficiency. By carefully controlling these parameters, the layer provides effective protection while minimizing the time and resources required for manufacturing
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The hydrogen trap layer effectively blocks hydrogen inflow, improving the reliability and performance of the thin film transistor by increasing hydrogen trap sites such as dislocations and point defects, thereby stabilizing the on-voltage and off-voltage control.
Implementation Method 1
hydrogen trap layer disposed on the buffer layer... increasing hydrogen trap sites such as dislocations and point defects... effectively blocks hydrogen inflow
Data Source
AI summary
An electroluminescent display device according to an example embodiment of the present disclosure may include a substrate including an active area having an emission area and a non-active area, a planarization layer disposed on the substrate, a light emitting element disposed on the planarization layer, a buffer layer disposed on the light emitting element and having a plurality of holes in a surface thereof and a hydrogen trap layer disposed on the buffer layer. As a result, by preventing hydrogen inflow into an oxide thin film transistor, characteristics and reliability of the thin film transistor can be improved.