Display Device Ion Injection Mask Reduction
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Solution Overview
Problem
The manufacturing of active matrix display devices requires multiple masks and additional process operations, increasing costs and reducing yield due to the need for precise photolithography and ion injection processes to enhance conductivity and minimize leakage current.
Innovation Solution
A method is introduced to reduce the number of masks and process operations by using a single mask pattern for ion injection, where high-concentration ions are injected into source and drain domains, and low-concentration ions are injected directly into the channel domain without an additional mask, allowing for the formation of a semiconductor pattern with overlapping electrodes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If multiple masks and additional process operations are used to enhance conductivity and minimize leakage current, then the manufacturing precision and device performance are improved, but the manufacturing cost increases and yield decreases
Solution Approach 1:
The patent combines multiple ion injection processes into a single integrated process. Specifically, it merges the formation of source/drain regions and channel region doping into one simultaneous ion injection step, eliminating the need for separate masks and process operations for each region, thereby reducing manufacturing complexity while maintaining precision
Solution Approach 2:
The patent employs a universal ion injection process that serves multiple functions: it forms source/drain regions, creates channel regions, and controls threshold voltage all in one step. This multi-functional approach replaces multiple specialized processes, reducing the overall number of masks and operations required
2Reliability
If high-concentration ion injection is performed to increase conductivity of lower electrode, then the electrical performance is improved, but additional masks and process operations are required increasing manufacturing cost
Solution Approach 1:
The patent merges the high-concentration ion injection for lower electrode conductivity enhancement with the ion injection for source/drain region formation. By performing these doping operations simultaneously in one process step, the patent achieves the required electrical performance without adding separate masking and injection steps, thereby controlling manufacturing cost
3Manufacturing precision
If multiple masks are used for ion injection processes, then the manufacturing precision is improved, but the manufacturing cost increases due to increased number of masks
Solution Approach 1:
The patent merges multiple ion injection operations into a single process step, eliminating the need for multiple masks. By performing source/drain doping and channel doping simultaneously with one mask pattern, the patent reduces mask quantity while maintaining the precision required for proper ion injection placement
Solution Approach 2:
The patent uses a universal mask design that serves multiple purposes: it defines source/drain regions, defines channel regions, and controls doping concentrations all in one mask. This multi-functional mask replaces what would traditionally require multiple separate masks, reducing the total number of masks needed
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach decreases manufacturing costs and increases yield by simplifying the ion injection processes and reducing the number of masks required, while maintaining the specific resistance of the semiconductor pattern.
Implementation Method 1
Ions of a first concentration are injected into source and drain domains of the semiconductor pattern and a lower electrode of the semiconductor pattern by using a mask pattern that selectively overlaps a channel domain
Data Source
AI summary
In a method of manufacturing a display device, a first insulating layer is formed on a semiconductor pattern. Ions of a first concentration are injected into source and drain domains of the semiconductor pattern and a lower electrode of the semiconductor pattern by using a mask pattern that selectively overlaps a channel domain of the semiconductor pattern and is positioned on the top of the first insulating layer. The mask pattern is removed. An ion injection process of injecting ions of a second concentration lower than the first concentration into the semiconductor pattern of the channel domain is directly performed in the first insulating layer. A gate electrode that overlaps the channel domain is formed on the top of the first insulating layer. An upper electrode that overlaps the lower electrode is formed on the top of the first insulating layer.