Display Layer Structure to Prevent Transistor Side Contact
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Solution Overview
Problem
Display devices face challenges in preventing the deterioration of transistors, which affects the reliability and performance of the devices over time.
Innovation Solution
A display device structure is designed with a specific configuration of conductive and insulating layers, where the thickness of the insulating layer varies in different areas to facilitate electrical connections between conductive and semiconductor layers, and light-emitting elements, while also including connection electrodes to enhance alignment and prevent transistor characteristic deterioration.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a uniform thickness insulating layer is used, then the manufacturing process is simple, but transistor deterioration occurs due to side surface contact
Solution Approach 1:
The insulating layer is designed with different thicknesses in different regions: a first thickness in the first area and a second thickness in the second area. This local variation prevents side surface contact between the semiconductor layer and conductive layer while maintaining manufacturing feasibility through selective etching processes.
2Reliability
If the insulating layer thickness is increased, then side surface contact is prevented, but manufacturing precision requirements increase
Solution Approach 1:
The insulating layer is segmented into two distinct thickness regions. The first area has a first thickness that prevents side surface contact, while the second area has a second thickness that facilitates proper electrical connection. This segmentation is achieved through controlled etching processes that create the desired thickness variation.
Solution Approach 2:
Different thicknesses are applied locally to different areas of the insulating layer based on their specific functional requirements. The first area requires greater thickness for isolation, while the second area requires lesser thickness for connection, optimizing both reliability and manufacturability.
3Reliability
If contact holes are formed through the insulating layer, then electrical connection is achieved, but transistor deterioration may occur
Solution Approach 1:
The insulating layer thickness is locally optimized: in the first area where the semiconductor layer is present, the greater thickness prevents side surface contact and transistor deterioration, while in the second area where contact holes are formed, the reduced thickness facilitates proper electrical connection between layers.
Data Source
AI summary
A display device includes a first conductive layer; a first insulating layer on the first conductive layer; a semiconductor layer disposed on the first insulating layer and electrically connected to the first conductive layer; a second conductive layer disposed on the semiconductor layer and electrically connected to the first conductive layer; and light emitting elements on the second conductive layer. A thickness of a part of the first insulating layer in a first area, which overlaps the semiconductor layer in a plan view, is different from a thickness of another part of the first insulating layer in a second area, which is exposed by the semiconductor layer.