Display Device Leakage Current Suppression via Low Doping Regions
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Solution Overview
Problem
Emissive display devices suffer from leakage current issues, leading to flicker phenomena due to current flow through transistors when not in operation or flowing to unintended places, which affects the display's performance and resolution.
Innovation Solution
The implementation of a semiconductor layer with specific transistor configurations and low doping regions in emissive display devices, where low doping regions are strategically placed between the channel and electrodes of certain transistors to reduce leakage current, and doping patterns are optimized to minimize pixel size while maintaining high resolution.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If low doping regions are added between the channel and electrodes of transistors to reduce leakage current, then leakage current is suppressed and flicker is reduced, but device complexity increases due to additional doping patterns
Solution Approach 1:
The patent applies local quality by creating low doping regions only in specific locations between the channel and electrodes where leakage occurs, rather than uniformly doping the entire semiconductor layer. This selective doping approach reduces leakage current at critical points while maintaining simpler doping patterns in other regions, thus balancing reliability improvement with device complexity control.
2Manufacturing precision
If doping patterns are optimized to minimize pixel size, then display resolution is improved, but manufacturing precision requirements increase
Solution Approach 1:
The patent segments the doping pattern into distinct low doping regions and high doping regions, with clear spatial separation between them. This segmentation allows for more manageable doping processes and easier quality control, as each region can be optimized independently. The low doping regions are positioned at specific locations between channels and electrodes, while other areas maintain standard doping levels, reducing the overall precision burden.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration effectively suppresses leakage current and reduces flicker phenomena, allowing for smaller pixel sizes and improved display resolution by controlling current flow and maintaining consistent voltage levels.
Implementation Method 1
a low doping region between the channel of the fourth transistor and the first electrode of the fourth transistor
Data Source
AI summary
A display device includes: a substrate; and a semiconductor layer including a driving transistor and a fourth transistor on the substrate, wherein a first electrode of the driving transistor is connected to a driving voltage line to receive a driving voltage, a first electrode of the fourth transistor is connected to a first initialization voltage line to receive a first initialization voltage, a second electrode of the fourth transistor is connected to a gate electrode of the driving transistor, a low doping region is between a channel of the fourth transistor and the first electrode of the fourth transistor, and a low doping region is not between the channel of the further transistor and the second electrode of the fourth transistor.