Display Device Lower Semiconductor Layer Segmentation
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Solution Overview
Problem
Current display devices face challenges in improving the characteristics of semiconductor elements for driving light emitting elements, particularly in terms of driving current control and light efficiency, due to limitations in the design and structure of transistors and light blocking patterns.
Innovation Solution
The display device incorporates a base substrate with a lower semiconductor layer, a buffer layer, and active semiconductor layers, including a first and second transistor with specific gate electrode configurations, where the lower semiconductor layer overlaps the channel region of the first transistor but not the second, and a light blocking pattern is used to apply a uniform voltage, enhancing the control of driving current and light emission.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a lower semiconductor layer is added to improve the characteristics of the first transistor, then the element characteristics of the first transistor are improved, but the structure complexity increases
Solution Approach 1:
The semiconductor layer is segmented into a lower semiconductor layer and an active semiconductor layer, with the lower layer positioned only under the first transistor's channel region. This segmentation allows the lower semiconductor layer to improve first transistor characteristics without unnecessarily complicating the overall device structure by limiting it to where it is most beneficial.
Solution Approach 2:
The lower semiconductor layer is applied locally only under the first transistor's channel region rather than uniformly across all transistor regions. This local quality approach improves the specific transistor's characteristics while avoiding unnecessary structural complexity in areas where such enhancement is not needed.
2Productivity
If the lower semiconductor layer overlaps the channel region of the first transistor, then the driving current control is improved, but the second transistor characteristics may deteriorate
Solution Approach 1:
The lower semiconductor layer is segmented to overlap only the first transistor's channel region and not the second transistor's channel region. This spatial segmentation ensures that the driving current control improvement is achieved for the first transistor without causing characteristic deterioration in the second transistor.
Solution Approach 2:
The lower semiconductor layer provides enhanced electrical characteristics locally under the first transistor's channel region where improved driving current control is needed, while deliberately excluding the second transistor's channel region to prevent any potential characteristic deterioration.
3Use of energy by moving object
If a light blocking pattern is added to control light emission, then the light efficiency is improved, but the device complexity increases
Solution Approach 1:
The light blocking pattern is segmented to be positioned specifically over the second transistor's channel region, creating a localized light blocking function. This segmentation improves light efficiency by preventing unwanted light generation in non-emissive areas while minimizing the addition of complex structural elements.
Solution Approach 2:
The lower semiconductor layer serves multiple functions: it improves the electrical characteristics of the first transistor for better driving current control, and when combined with the light blocking pattern, it also contributes to light efficiency enhancement. This multi-functionality reduces the need for additional separate components.
Data Source
AI summary
A display device includes a base substrate including a first substrate and a second substrate sequentially laminated, a lower semiconductor layer disposed on at least one of the first substrate and the second substrate, a buffer layer disposed on the base substrate, an active semiconductor layer disposed on the buffer layer and including a first active layer of a first transistor and a second active layer of a second transistor, a first insulating layer disposed on the active semiconductor layer, and a first conductive layer disposed on the first insulating layer and including a first gate electrode of the first transistor and a second gate electrode of the second transistor, wherein the lower semiconductor layer overlaps the first active layer, and does not overlap the second active layer.