Display Margin Dummy Pattern Layout for Residue-Free Etching
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Solution Overview
Problem
In the manufacturing of display apparatuses, the margin area's design poses challenges in improving display quality due to issues like loading effects during photoresist development, which can lead to non-uniform etching and residues, especially when using low-skew etchants like organic acid solutions.
Innovation Solution
A method involving the formation of a dummy pattern in the margin area with an opening ratio of 30% or more, using a repeating pattern of rectangles, alleviates the loading effect by ensuring sufficient etching without residues, even with organic acid etchants, thereby enhancing the quality of the display apparatus.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a dummy pattern is formed in the margin area with high coverage (low opening ratio), then the loading effect is reduced, but etching residues occur and manufacturing precision deteriorates
Solution Approach 1:
The patent applies parameter changes by optimizing the opening ratio of the dummy pattern to a specific range (30-70%). This parameter optimization balances two competing requirements: maintaining sufficient coverage to reduce loading effects during photoresist development, while ensuring adequate opening space for complete etchant penetration and residue-free etching. The specific numerical range represents a carefully determined parameter window that resolves the contradiction between loading effect reduction and etching quality.
2Manufacturing precision
If the opening ratio of dummy pattern is increased to improve etching quality, then etching residues are reduced, but the loading effect mitigation capability deteriorates
Solution Approach 1:
The patent resolves this contradiction by establishing an optimal parameter range for the opening ratio (30-70%). Within this range, the dummy pattern maintains sufficient coverage to mitigate loading effects during photoresist development, while simultaneously providing adequate opening space for complete etchant penetration. The lower bound (30%) ensures sufficient coverage for loading effect mitigation, while the upper bound (70%) ensures adequate opening for residue-free etching.
3Ease of manufacture
If conventional etching methods are used in the margin area, then manufacturing process is simple, but non-uniform etching and residues occur leading to poor display quality
Solution Approach 1:
The patent applies preliminary action by forming a dummy pattern in the margin area before the actual etching process. This dummy pattern serves as a preparatory structure that modifies the etching environment in advance, ensuring uniform etching characteristics and preventing residues. The dummy pattern is formed as part of the conductive layer structure and is removed after serving its purpose, representing a preliminary action that enables subsequent high-quality etching.
Solution Approach 2:
The patent changes the structural parameters of the margin area by introducing a dummy pattern with a specific opening ratio (30-70%). This parameter change transforms the margin area from a problematic region prone to non-uniform etching and residues into a controlled structure that promotes uniform etching. The opening ratio parameter is specifically optimized to balance loading effect mitigation and etchant penetration, thereby improving display quality without significantly complicating the manufacturing process.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The dummy pattern with an appropriate opening ratio ensures effective etching and reduces residues, improving the overall quality of the display apparatus by preventing deviations in the photolithography process and maintaining the function of alleviating loading effects.
Implementation Method 1
forming a photoresist pattern by exposing and developing the photoresist layer
Implementation Method 2
forming the first conductive pattern may include wet etching the first conductive layer using an organic acid etchant
Data Source
AI summary
A method of manufacturing a display apparatus includes forming a first conductive layer on a base substrate including a panel area and a margin area disposed next to the panel area, the margin area including a dummy pattern area, forming a photoresist layer on the first conductive layer, forming a photoresist pattern by exposing and developing the photoresist layer, forming a first conductive pattern by etching the first conductive layer using the photoresist pattern, and removing the photoresist pattern. The forming the first conductive pattern includes forming a first pixel circuit pattern in the panel area, and forming a dummy pattern in the dummy pattern area of the margin area. An opening ratio of a portion where the dummy pattern is not formed with respect to the dummy pattern area is about 30% or more.