Display Panel Grooves for Reliable Bent-Region TFT Integration
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Solution Overview
Problem
Existing display panel technologies face challenges in efficiently integrating thin-film transistors and luminescent devices while maintaining flexibility and structural integrity, particularly in regions that require bending, leading to potential malfunctions and reduced performance.
Innovation Solution
A display panel design featuring a base layer with distinct first and second regions, where inorganic layers are overlapped by thin-film transistors with silicon and oxide semiconductor patterns, and grooves are formed in insulating layers to accommodate bending, with an organic layer and signal lines connecting these transistors, and a luminescent device is integrated on the organic layer.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If thin-film transistors and luminescent devices are integrated in bent regions, then device functionality is achieved, but structural integrity and reliability deteriorate due to bending stress
Solution Approach 1:
The display panel is divided into a first region (flat area) and a second region (bent area), with different structural configurations in each region. The inorganic layers and grooves are specifically positioned to accommodate the bending region while maintaining the flat region's structural integrity, allowing the device to function in both regions without compromising reliability.
Solution Approach 2:
Different structural characteristics are applied to different regions: the first region maintains a standard layered structure for optimal device performance, while the second region incorporates grooves and adjusted layer configurations to accommodate bending stress. This localized adaptation allows the structure to maintain integrity during bending while preserving functionality in the flat region.
2Adaptability or versatility
If inorganic layers are extended into bent regions, then flexibility is improved, but leakage currents increase
Solution Approach 1:
Grooves are formed in the inorganic layers within the bent region to extract or remove the problematic continuous inorganic material from the bending path. This discontinuation of the inorganic layer in the groove regions reduces leakage currents while still allowing the overall structure to flex, as the grooves provide stress relief points.
Solution Approach 2:
The inorganic layers are designed with a thin-film structure that can accommodate bending when configured with grooves. The grooves create a flexible configuration that allows the thin inorganic layers to bend without breaking or creating excessive leakage paths, effectively making the rigid inorganic material adaptable to bending conditions.
3Adaptability or versatility
If grooves are formed in inorganic layers to accommodate bending, then flexibility is improved, but manufacturing complexity increases
Solution Approach 1:
The grooves are formed in the inorganic layers during the manufacturing process before the final device assembly and bending operations. This preliminary formation of grooves ensures that the flexibility feature is built-in from the start, avoiding the need for post-manufacturing modifications or complex assembly steps to create the flexible configuration.
Solution Approach 2:
The groove formation process is integrated into the existing inorganic layer deposition and patterning工艺流程. By combining the groove creation with the standard inorganic layer fabrication steps, the manufacturing complexity is minimized rather than adding a separate, complex processing stage.
4Reliability
If multiple semiconductor patterns are used in thin-film transistors, then device performance is improved, but manufacturing precision requirements increase
Solution Approach 1:
Different semiconductor material types (oxide semiconductor and silicon semiconductor) are used in different locations within the pixel circuit. Each semiconductor pattern is optimized for its specific function and position, with precise alignment requirements managed through localized patterning processes rather than requiring high-precision alignment across the entire device structure.
Data Source
AI summary
A display panel includes a base layer having a first region and a bent second region. An inorganic layer is disposed on the base layer. A lower groove is formed within the inorganic layer and overlaps the second region. A first thin-film transistor is disposed on the inorganic layer and includes a silicon semiconductor pattern overlapping the first region. A second thin-film transistor is disposed on the inorganic layer and includes an oxide semiconductor pattern overlapping the first region. Insulating layers overlap the first and second regions. An upper groove is formed within the insulating layers. A signal line electrically connects the second thin-film transistor. An organic layer overlaps the first and second regions and is disposed in the lower and upper grooves. A luminescent device is disposed on the organic layer and overlaps the first region.