Display Panel Gate Insulator Layout for Hydrogen Diffusion

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Solution Overview

Problem

The ability of display panels to supply hydrogen for active layers is insufficient, leading to large sub-threshold swing and lower mobility in thin film transistors, affecting electrical properties and stability.

Innovation Solution

A display panel design with a first gate insulating layer having different thickness sub-portions, where the portion covering the first gate is thicker than the portion not covering it, allowing easier hydrogen diffusion from a second gate insulating layer containing hydrogen, and optimizing the thickness and distribution of subsequent layers to enhance hydrogen supply and capacitor capacitance.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If a uniform thickness gate insulating layer is used, then the manufacturing process is simple, but the hydrogen supply ability to the active layer is insufficient

Engineering Contradiction:
Improvehydrogen supply abilityVSAvoidgate insulating layer structure
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The gate insulating layer is designed with different thicknesses in different regions: a first thickness in the first region (over the active layer) and a second thickness in the second region (outside the active layer). This local quality variation enables optimized hydrogen supply to the active layer while maintaining manufacturing feasibility.

Inventive Principle:
Principle #3Local quality

2Reliability

If the gate insulating layer is made thinner to improve hydrogen diffusion, then hydrogen supply improves, but the insulation performance deteriorates

Engineering Contradiction:
Improvehydrogen diffusion abilityVSAvoidinsulation performance
Core Design Contradiction:
ReliabilityVSObject-affected harmful factors

Solution Approach 1:

The gate insulating layer thickness is locally optimized: thinner in regions where hydrogen diffusion is needed (first region over active layer) and thicker in regions where insulation is critical (second region outside active layer). This resolves the contradiction between hydrogen diffusion and insulation performance.

Inventive Principle:
Principle #3Local quality

Solution Approach 2:

The gate insulating layer is segmented into multiple regions with different thickness characteristics. The first region has a first thickness optimized for hydrogen diffusion, while the second region has a second thickness optimized for insulation, allowing both requirements to be satisfied simultaneously.

Inventive Principle:
Principle #1Segmentation

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

Improves hydrogen supply to active layers, reducing sub-threshold swing, enhancing thin film transistor mobility, and increasing storage capacitor capacitance, thereby improving display panel stability and performance.

Implementation Method 1

Hydrogen in the gate insulating layer is often supplied to the active layer by a baking process

Methodology Applied
Scientific EffectDiffusion: Diffusion

Data Source

PatentUS20260047205A1Display panel and display device
Publication Date: 2026.02.12 TCL CHINA STAR OPTOELECTRONICS TECHNOLOGY CO LTD
  • US20260047205A1 patent drawing
  • US20260047205A1 patent drawing
  • US20260047205A1 patent drawing

AI summary

The disclosure provides a display panel and a display device. The display panel includes an active layer, a first gate insulating layer, a first gate, and a second gate insulating layer; the first gate insulating layer covers the active layer; the first gate is disposed on a side of the first gate insulating layer away from the active layer; the second gate insulating layer is disposed on a side of the first gate insulating layer away from the active layer and covers the first gate, and the second gate insulating layer contains hydrogen element; and the first gate insulating layer includes a first sub-portion disposed between the active layer and the first gate, and a second sub-portion connected to the first sub-portion, and a thickness of the first sub-portion is greater than a thickness of the second sub-portion.