Display Panel W/L Tuning for Infrared Sensing Uniformity
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Solution Overview
Problem
Existing display devices face challenges in balancing infrared sensing capabilities with display quality, particularly in regions where infrared sensors are integrated, leading to luminance and pixel density disparities that affect overall image clarity and infrared light transmission.
Innovation Solution
The display device incorporates a first region with a higher W/L ratio for transistors, lower pixel density, and a transmitting region to enhance infrared light transmission while compensating for luminance differences through adjusted transistor channel dimensions and pixel structure.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a sensing module is integrated on the rear surface of the display panel, then infrared sensing capabilities are improved, but luminance disparities and pixel density differences occur between overlapping and non-overlapping regions
Solution Approach 1:
The patent applies local quality by differentiating transistor W/L ratios and pixel densities between the first region (overlapping sensing module) and second region (non-overlapping). Transistors in the first region have higher W/L ratios to compensate for reduced light transmission, while pixel density is reduced in the first region to prevent overcrowding. This localized adaptation ensures uniform luminance across different regions despite the presence of the sensing module.
Solution Approach 2:
The patent changes key parameters including transistor W/L ratio (higher in first region), pixel density (lower in first region at 20-90% of second region), and introduces transmitting regions with specific area ratios (20-90% of first region). These parameter adjustments optimize both infrared transmission and display quality in the sensing module overlapping area.
2Illumination intensity
If pixel density is increased to improve display quality, then image clarity is improved, but infrared light transmission in the sensing module region is blocked
Solution Approach 1:
The patent implements local quality by creating a transmitting region within the first region that has optimized pixel density and structure specifically for infrared transmission. The pixel density in the first region is reduced to 20-90% of the second region, and transmitting regions occupy 20-90% of the first region area, allowing infrared light to pass through while maintaining adequate display quality in non-overlapping areas.
3Illumination intensity
If transistor channel dimensions are adjusted to compensate for luminance differences, then luminance uniformity is improved, but manufacturing complexity increases
Solution Approach 1:
The patent applies local quality by differentiating transistor W/L ratios between regions. Transistors in the first region have higher W/L ratios to compensate for reduced light transmission through the sensing module, while transistors in the second region use standard ratios. This localized differentiation achieves luminance uniformity while keeping the manufacturing process relatively simple through clear regional differentiation.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration improves infrared sensing capabilities while maintaining high luminance and minimizing luminance disparities between regions with and without infrared sensors, enhancing overall display quality and functionality.
Implementation Method 1
The light blocking layer may block infrared rays
Implementation Method 2
The display device may transmit infrared light by using the infrared ray sensor
Data Source
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AI summary
A display device including a display panel including a plurality of transistors and displaying an image on a front surface thereof; and a sensing module (1200) on a rear surface of the display panel, wherein the display panel includes a first region (A1) that overlaps the sensing module and a second region (A2) that does not overlap the sensing module, a W/L ratio of one of the transistors in the first region is greater than a W/L ratio of another of the transistors in the second region, the W/L ratio being obtained by dividing a width of a channel of the transistor by a length of the channel.