Display Panel Pixel Circuit Layout Using Silicon and Oxide TFTs
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Solution Overview
Problem
Existing display technologies face challenges in meeting diverse transistor performance requirements within a single circuit structure due to the use of transistors of the same type, limiting design freedom and flexibility in the manufacturing process.
Innovation Solution
Incorporating transistors of different types, such as silicon and oxide semiconductor transistors, within the driving array layer of a display panel, allowing for varied channel region dimensions and configurations to satisfy specific performance needs, while increasing positional freedom for other components in the circuit structure.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If all transistors in the circuit structure are of the same type, then the manufacturing process is simplified, but it becomes difficult to meet different performance requirements for individual transistors and design freedom is restricted
Solution Approach 1:
The patent applies local quality by using different transistor types (oxide semiconductor transistors for switching functions requiring low leakage, and silicon-based transistors for driving functions requiring high current) in different positions within the circuit structure. This allows each transistor to be optimized for its specific functional requirement while maintaining overall manufacturing feasibility through standardized fabrication processes.
2Adaptability or versatility
If transistors of different types are used in the circuit structure, then design freedom and performance requirements are met, but the manufacturing process complexity increases
Solution Approach 1:
The patent segments the circuit structure into distinct functional regions: pixel circuits containing oxide semiconductor transistors for switching, and driving circuits containing silicon-based transistors for signal generation and control. This segmentation allows each region to be optimized independently while using standardized fabrication processes for each transistor type, reducing overall manufacturing complexity despite the diversity of transistor types.
3Reliability
If transistors of different types are used with varied channel dimensions, then specific performance needs are satisfied, but the manufacturing precision requirements increase
Solution Approach 1:
The patent utilizes parameter changes by adjusting channel width and length dimensions of different transistor types to achieve desired performance characteristics. Oxide semiconductor transistors use specific channel dimensions optimized for low leakage current, while silicon-based transistors use dimensions optimized for high current drive capability. These parameter variations are achieved through controlled fabrication processes that maintain acceptable precision levels.
Data Source
AI summary
Provided are display panels and display apparatus. The display panel includes a driving array layer including a pixel circuit and a driving circuit configured to provide a control signal to the pixel circuit. The pixel circuit includes first and third transistors. The driving circuit includes second and fourth transistors. The first to fourth transistors include an active layer including silicon, an active layer including oxide semiconductor, an active layer including oxide semiconductor, and an active layer including silicon. The first and the third transistors are switching transistors of the pixel circuit, |W1/L1-W4/L4|<|W2/L2-W3/L3|; or the first and the third transistors are a driving transistor and a switching transistor of the pixel circuit, respectively, |W1/L1-W4/L4|>5*|W2/L2-W3/L3|; or the first and third transistors are a switching transistor and a driving transistor of the pixel circuit, respectively, 5*|W1/L1-W4/L4|<|W2/L2-W3/L3|.