Display Panel Layout Using Mixed TFTs to Limit Capacitor Crosstalk
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Solution Overview
Problem
In OLED display technology, the use of identical transistors in the driving array layer limits the ability to meet diverse transistor performance requirements and restricts design freedom in circuit structures, making it difficult to optimize the characteristics of individual transistors and other components.
Innovation Solution
Incorporating transistors of different types, such as low-temperature poly-silicon and oxide semiconductors, with distinct active layers and capacitors in the driving array layer, allowing for varied transistor performance and increased positional freedom of components, thereby enhancing the flexibility and efficiency of the circuit structure.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If all transistors in the driving array layer are of the same type, then the manufacturing process is simplified, but the ability to meet different performance requirements for individual transistors is reduced
Solution Approach 1:
The patent applies local quality by using different transistor types (oxide semiconductor and silicon-based) in different regions of the driving array layer. Specifically, oxide semiconductor transistors are used for switching elements requiring low leakage current, while silicon-based transistors are used for driving elements requiring high current drive capability. This allows each transistor to be optimized for its specific function rather than using a uniform design throughout.
2Adaptability or versatility
If transistors of different types are used in the driving array layer, then design freedom and performance optimization are improved, but the manufacturing process complexity increases
Solution Approach 1:
The patent segments the driving array layer into distinct regions with different transistor types. The oxide semiconductor transistor region and silicon-based transistor region are separately defined and fabricated using type-specific processes. This segmentation allows each region to be optimized independently while maintaining overall manufacturing feasibility through systematic process organization.
Solution Approach 2:
The patent employs composite materials by integrating two different semiconductor materials (oxide semiconductor and silicon) in the same driving array layer. Each material brings distinct electrical characteristics that are leveraged for specific circuit functions, creating a composite structure that combines the advantages of both material systems while managing the complexity through careful process integration.
3Area of stationary object
If capacitors are arranged to overlap transistors, then the area utilization is improved, but the crosstalk between components increases
Solution Approach 1:
The patent introduces an intermediary shielding structure (shielding electrode or shielding layer) positioned between the capacitor and transistor when they must overlap in the planar view. This intermediary element blocks or reduces the electrical coupling and crosstalk between the capacitor and transistor while allowing both components to occupy the same vertical space, thus maintaining high area utilization without suffering from harmful interference.
Data Source
AI summary
Provided are display panels and display apparatus. The display panel includes a driving array layer including a pixel circuit and a driving circuit configured to provide a control signal to the pixel circuit. The pixel circuit includes a first capacitor and a first transistor including an active layer including silicon. The driving circuit includes a second capacitor and a second transistor including an active layer including oxide semiconductor. In a direction perpendicular to a plane of the display panel, the first capacitor partially overlaps the first transistor, and the second capacitor does not overlap the second transistor; or in a direction perpendicular to a plane of the display panel, an area of a region where the first capacitor overlaps the first transistor is greater than an area of a region where the second capacitor overlaps the second transistor.