Display Panel Insulating Stack for Stable Oxide TFTs
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Solution Overview
Problem
The stability of metal oxide semiconductor transistors in OLED display panels is poor, affecting the performance of driving circuits and pixel circuits, leading to suboptimal display effects.
Innovation Solution
A display panel design incorporating a silicon-containing transistor and an oxide semiconductor transistor, with an inorganic insulating layer and an organic planarization layer, where the insulating layer includes sublayers with varying compactness to block hydrogen and water-oxygen, enhancing the stability of the oxide semiconductor transistor.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If an IGZO transistor is used to reduce leakage current, then the transistor can function as a current-driven element, but the stability of the transistor becomes poor
Solution Approach 1:
An inorganic insulating layer is introduced as an intermediary barrier between the oxide semiconductor active layer and the organic planarization layer. This intermediate layer prevents harmful substances (hydrogen and water-oxygen) from the organic layer from reaching and degrading the oxide semiconductor, thereby improving transistor stability without affecting its current-driven functionality
Solution Approach 2:
The inorganic insulating layer creates a protected, inert environment around the oxide semiconductor active layer by blocking the penetration of hydrogen and water-oxygen. This protective barrier maintains a stable chemical environment for the oxide semiconductor, preventing degradation and improving long-term reliability
2Shape
If an organic planarization layer is used to planarize the surface, then the surface flatness is improved, but hydrogen and water-oxygen in the organic material damage the oxide semiconductor active layer
Solution Approach 1:
The inorganic insulating layer serves as a protective intermediary positioned between the organic planarization layer and the oxide semiconductor active layer. It allows the organic layer to provide surface planarization while simultaneously blocking harmful hydrogen and water-oxygen from reaching and damaging the sensitive oxide semiconductor material
Solution Approach 2:
The solution applies local protection by introducing the inorganic insulating layer specifically at the interface where the oxide semiconductor contacts the organic planarization layer. This localized approach protects the vulnerable oxide semiconductor region while maintaining the overall structure and functionality of the device
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration improves the stability and performance of the driving circuit, ensuring better display effects by protecting the oxide semiconductor active layer from damage and maintaining the advantages of both silicon and oxide semiconductor transistors.
Implementation Method 1
the first insulating layer is located on a side of the second gate facing away from the base substrate and includes an inorganic material... hydrogen and water-oxygen in the organic material can be blocked from affecting the oxide semiconductor active layer
Data Source
AI summary
Provided are a display panel and a display device. The display panel includes a base substrate; a first transistor including a first active layer including silicon, a first gate, a first source and a first drain; a second transistor including a second active layer including an oxide semiconductor, a second gate located on a side of the second active layer facing away from the base substrate, a second source and a second drain; a first insulating layer including an inorganic material; and a planarization layer including an organic material. The first insulating layer includes a first insulating sublayer and a second insulating sublayer. The second insulating sublayer is located on a side of the first insulating sublayer facing away from the base substrate, and a compactness of the second insulating sublayer is greater than a compactness of the first insulating sublayer.