Display Pixel Circuit Layout for Precise Black Grayscale
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Solution Overview
Problem
Existing display devices face challenges in achieving improved display quality, particularly in maintaining high contrast ratios and efficient display of black grayscale images due to issues with pixel circuit design and transistor configurations.
Innovation Solution
The display device incorporates a circuit layer with pixel circuits connected by a horizontal connecting line that overlaps with an oxide semiconductor pattern, and a transistor with a gate overlapping this overlap part, along with a transistor configuration that includes an oxide semiconductor pattern and a gate structure to manage bypass currents, enhancing pixel performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If a conventional pixel circuit design is used, then the device complexity is reduced, but the display quality and contrast ratio deteriorate
Solution Approach 1:
The pixel circuit is divided into multiple functional blocks including a first pixel circuit for normal operation and a second pixel circuit for black grayscale display. This segmentation allows each circuit to be optimized for its specific function, improving overall display quality while managing complexity through functional separation
Solution Approach 2:
Different transistor configurations are applied to different regions of the pixel circuit. The first pixel circuit uses a standard transistor design while the second pixel circuit employs a specific transistor configuration with oxide semiconductor patterns optimized for black grayscale display, achieving local optimization for display quality
2Manufacturing precision
If a simple transistor configuration is used, then the ease of manufacture is improved, but the ability to display black grayscale images deteriorates
Solution Approach 1:
The transistor configuration is specifically optimized in the second pixel circuit for black grayscale display by incorporating oxide semiconductor patterns and a gate overlapping the overlap part. This localized enhancement achieves precise black grayscale control without complicating the entire transistor design
Solution Approach 2:
The horizontal connecting line is designed to overlap with the oxide semiconductor pattern in advance, and the gate is positioned to overlap this overlap part. This preliminary configuration ensures proper electrical connection and current control for black grayscale display before operation
3Manufacturing precision
If the horizontal connecting line does not overlap with the oxide semiconductor pattern, then the device complexity is reduced, but the contrast ratio deteriorates
Solution Approach 1:
The horizontal connecting line is deliberately positioned to overlap with the oxide semiconductor pattern, and the gate is placed to overlap this overlap part. This preliminary geometric configuration ensures proper electrical connection and current control, achieving high contrast ratio through optimized spatial arrangement
Solution Approach 2:
The gate serves as an intermediary element that overlaps the overlap part between the horizontal connecting line and oxide semiconductor pattern. This intermediary positioning controls the electrical connection and current flow, enabling precise contrast ratio control
Data Source
AI summary
A display device includes: a base layer including a display region and a non-display region in the base layer; a circuit layer on the base layer; and an element layer on the circuit layer, and including a light emitting element, wherein the circuit layer includes: a pixel circuit connected to the light emitting element; a data line connected to the pixel circuit; a vertical connecting line spaced apart from the data line in a first direction, and extending in a second direction; and a horizontal connecting line connecting the vertical connecting line to the data line in the display region, and extending in the first direction, wherein the pixel circuit includes a transistor including an oxide semiconductor pattern, wherein the horizontal connecting line includes an overlap part overlapping with a connecting pattern extending from the oxide semiconductor pattern, and wherein the transistor includes a gate overlapping with the overlap part.