Display Pixel Circuit Layers for Hydrogen-Resistant Transistors
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Solution Overview
Problem
Conventional display apparatuses are prone to defects due to hydrogen penetration into semiconductor layers during the manufacturing process, which affects the charge mobility and functionality of transistors.
Innovation Solution
The display apparatus incorporates a pixel circuit with specific semiconductor layer configurations, including a 1-3 semiconductor layer with a different material from the 1-1 and 1-2 layers, and a 2-2 semiconductor layer with a higher charge mobility than the 2-1 layer, separated by buffer and inorganic insulating layers, to enhance transistor performance and reduce hydrogen ingress.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional semiconductor layer structures are used, then manufacturing process is simpler, but hydrogen penetration into semiconductor layers causes defects
Solution Approach 1:
The semiconductor layer is divided into multiple distinct layers (first semiconductor layer, second semiconductor layer, third semiconductor layer) with different materials and functions. This segmentation allows each layer to be optimized for specific purposes: the first layer provides high charge mobility for switching performance, the second layer serves as a hydrogen barrier, and the third layer provides additional protection, collectively preventing hydrogen penetration while maintaining manufacturing feasibility.
Solution Approach 2:
The patent employs composite material structure by combining different semiconductor materials in a layered configuration. The first semiconductor layer uses a material with high charge mobility (such as IGZO), while the second and third layers use materials with hydrogen barrier properties. This composite approach enables the structure to simultaneously achieve high electrical performance and hydrogen protection without requiring complete redesign of the manufacturing process.
2Object-affected harmful factors
If multiple semiconductor layers with different materials are used, then hydrogen penetration is reduced, but device complexity increases
Solution Approach 1:
Different regions of the semiconductor structure are assigned different material qualities based on local functional requirements. The first semiconductor layer positioned in the channel region uses high-mobility material for optimal switching performance, while the second and third layers positioned at the interfaces with the substrate and gate electrode use hydrogen-barrier materials. This local differentiation protects vulnerable regions from hydrogen penetration while preserving high charge mobility where needed, managing complexity through functional specialization rather than uniform structure.
Data Source
AI summary
A display apparatus includes a pixel circuit on a substrate. The pixel circuit includes first and second transistors. A display element is electrically connected to the pixel circuit. The first transistor includes a first semiconductor layer disposed on the substrate. The first semiconductor layer includes a 1-1 semiconductor layer, a 1-2 semiconductor layer, and a 1-3 semiconductor layer disposed between the 1-1 semiconductor layer and the 1-2 semiconductor layer. The 1-1 semiconductor layer and the 1-2 semiconductor layer include a same material as each other and the 1-3 semiconductor layer includes a material different from the material of the 1-1 and 1-2 semiconductor layers. A first gate electrode is disposed on the first semiconductor layer and overlaps the 1-3 semiconductor layer. A first connection electrode is disposed on the first gate electrode. The first connection electrode is electrically connected to the 1-1 semiconductor layer or the 1-2 semiconductor layer.