Display Pixel Circuits With Dual Shield Layers
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Solution Overview
Problem
The challenge of manufacturing high-resolution display devices lies in efficiently arranging electronic elements in a narrow area, which is not adequately addressed by existing technologies.
Innovation Solution
A display device design incorporating a first pixel circuit with a driving transistor, a first initialization transistor, and a shield layer configuration, along with specific semiconductor layer arrangements, including oxide and silicon semiconductor layers, to optimize element placement and functionality.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If electronic elements are arranged in a narrow area to achieve high resolution, then display resolution is improved, but device complexity and manufacturing difficulty increase
Solution Approach 1:
The patent utilizes multi-layer stacking architecture where pixel circuits, transfer transistors, and shield layers are arranged in vertical layers rather than only horizontal planes. This three-dimensional arrangement allows high-density pixel packing while maintaining manufacturability by distributing complex elements across multiple fabrication layers.
Solution Approach 2:
The pixel circuit is divided into multiple functional blocks including driving transistors, initialization transistors, transfer transistors, and shield layers, each with specific responsibilities. This segmentation allows independent optimization of each component and simplifies the manufacturing process by enabling modular fabrication approaches.
2Stability of the object's composition
If shield layers are added to reduce luminance deviation, then display uniformity is improved, but device complexity and manufacturing steps increase
Solution Approach 1:
Shield layers are strategically positioned only in specific regions where luminance deviation occurs, such as near pixel circuits and transfer transistors, rather than uniformly across the entire display. This localized shielding approach reduces the number of shield layers needed while effectively correcting luminance non-uniformity in critical areas.
Solution Approach 2:
The shield layers act as intermediary elements between pixel circuits and color filter layers, mediating the electromagnetic field interactions that cause luminance deviation. These shield layers, positioned at specific potentials, cancel out unwanted field effects without requiring fundamental changes to the pixel structure.
3Reliability
If multiple transistor types (oxide and silicon semiconductor) are used to optimize performance, then display quality is improved, but manufacturing process complexity increases
Solution Approach 1:
Different semiconductor materials are used in different regions: oxide semiconductor transistors are deployed where low leakage current is critical (such as transfer transistors holding pixel voltage), while silicon semiconductor transistors are used where high current drive is needed (such as driving transistors controlling LED current). This material assignment optimizes performance for each functional requirement.
Solution Approach 2:
The display employs a composite semiconductor architecture combining oxide and silicon semiconductor layers within the same pixel circuit. This composite approach leverages the complementary strengths of both material systems to achieve superior overall device performance while managing manufacturing complexity through established fabrication techniques.
Data Source
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AI summary
A display device includes a first pixel circuit disposed on a substrate and a first light-emitting diode electrically connected to the first pixel circuit, the first pixel circuit includes a driving transistor including a driving semiconductor layer and a driving gate electrode, a first initialization transistor including a first initialization semiconductor layer and a first initialization gate electrode and electrically connected to the driving transistor, and a first connection electrode electrically connecting the first initialization semiconductor layer to the driving gate electrode, a semiconductor layer including the first initialization semiconductor layer includes a first extension area extending from a channel area of the first initialization semiconductor layer to the first connection electrode, and the first extension area overlaps a first shield layer disposed under the first initialization semiconductor layer and a second shield layer disposed above the first initialization semiconductor layer.