Display Pixel Circuit Layout for Hydrogen Diffusion Control

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Solution Overview

Problem

High-resolution display devices face issues with pixel performance due to hydrogen diffusion affecting the driving transistor, leading to compromised light-emission characteristics and reduced reliability.

Innovation Solution

Incorporation of a hydrogen diffusion control layer between insulating layers to regulate hydrogen diffusion, allowing controlled passivation of the active pattern, particularly in the drain region, thereby maintaining optimal transistor performance.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Ease of manufacture

If insulating layers are formed during manufacturing, then device structure is completed, but hydrogen diffusion occurs causing pixel performance degradation

Engineering Contradiction:
Improvedevice structure completionVSAvoidpixel performance
Core Design Contradiction:
Ease of manufactureVSReliability

Solution Approach 1:

A hydrogen diffusion control layer is introduced as an intermediary component between the first and second insulating layers. This control layer specifically regulates hydrogen diffusion in the second region corresponding to the driving transistor, preventing hydrogen from reaching the active pattern while maintaining the necessary insulating structure for device completion.

Inventive Principle:
Principle #24Intermediary (Mediator)

2Reliability

If hydrogen diffusion is prevented completely, then transistor performance is maintained, but passivation of active pattern is insufficient

Engineering Contradiction:
Improvetransistor performanceVSAvoidactive pattern passivation
Core Design Contradiction:
ReliabilityVSStability of the object's composition

Solution Approach 1:

The hydrogen diffusion control layer is configured with spatially varying properties: in the first region corresponding to the switching transistor, the layer allows hydrogen diffusion to passivate the active pattern; in the second region corresponding to the driving transistor, the layer prevents hydrogen diffusion to protect transistor performance. This local differentiation resolves the contradiction between passivation needs and performance maintenance.

Inventive Principle:
Principle #3Local quality

3Productivity

If high-resolution display is implemented, then pixel density increases, but hydrogen diffusion impact on driving transistor increases

Engineering Contradiction:
Improvepixel densityVSAvoidhydrogen diffusion impact
Core Design Contradiction:
ProductivityVSObject-affected harmful factors

Solution Approach 1:

The hydrogen diffusion control layer extracts and isolates the hydrogen diffusion problem to specific regions. By positioning the control layer to overlap the second region (driving transistor) while allowing hydrogen diffusion in the first region (switching transistor), the patent selectively addresses hydrogen diffusion impacts in high-density pixel configurations, protecting the more sensitive driving transistor while maintaining overall pixel performance.

Inventive Principle:
Principle #2Taking out (Extraction)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

Enhances pixel reliability by preventing unwanted chemical reactions and degradation, ensuring stable light-emission characteristics and improved display quality.

Implementation Method 1

hydrogen diffusion control layer disposed between the first insulating layer and the second insulating layer, and overlapping the second region

Methodology Applied
Scientific EffectHydrogen diffusion: Diffusion

Data Source

PatentUS20260052853A1Display device and fabrication method thereof
Publication Date: 2026.02.19 SAMSUNG DISPLAY CO LTD
  • US20260052853A1 patent drawing
  • US20260052853A1 patent drawing
  • US20260052853A1 patent drawing

AI summary

A display device includes a substrate, a light-emitting element layer, and a circuit element layer with a first and second regions that each correspond to a switching transistor and a driving transistor. The circuit element layer includes a semiconductor layer; a first conductive layer, a first insulating layer disposed between the semiconductor layer and the first conductive layer, a second insulating layer, a second conductive layer disposed on the second insulating layer and is in contact with the semiconductor layer by penetrating the first and second insulating layers, and a hydrogen diffusion control layer disposed between the first and second insulating layer and overlapping the second region. The second active pattern comprises a first and a second portion. The hydrogen diffusion control layer covers the first portion of the second active pattern and at least a portion of the second portion does not overlap the hydrogen diffusion control layer.