Display Pixel Layout With Light Shielding for TFT Leakage Control
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
The miniaturization of light-emitting elements in display devices leads to light leakage issues due to gaps between alignment electrodes, which can irradiate driving elements and affect their performance.
Innovation Solution
Incorporating a light-shielding element between the light-emitting element and the thin-film transistor to block light emitted from the light-emitting element, thereby preventing it from irradiating the thin-film transistor.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If miniaturized light-emitting elements are used, then the display device achieves higher resolution and smaller size, but light leakage occurs through gaps between alignment electrodes affecting driving element performance
Solution Approach 1:
A light-shielding element is introduced as an intermediary component between the light-emitting element and the thin-film transistor. This light-shielding element blocks the light path from the light-emitting element to the thin-film transistor, preventing light leakage from affecting the driving element while maintaining the miniaturized structure.
Solution Approach 2:
The display device structure is segmented into distinct functional zones: the light-emitting element region, the light-shielding element region, and the thin-film transistor region. This segmentation allows the light-shielding element to be positioned strategically to block light paths without interfering with the electrical function of the thin-film transistor or the light emission function of the light-emitting element.
2Ease of operation
If gaps are reserved between alignment electrodes, then electric field can be generated for transferring miniaturized light-emitting elements, but light can pass through the gap to irradiate the driving element
Solution Approach 1:
The light-shielding element serves as a mediator that allows the gap between alignment electrodes to remain open for electric field generation while simultaneously blocking light from passing through the gap to reach the thin-film transistor. This resolves the contradiction by adding a component that addresses the light leakage issue without affecting the electrical function.
Solution Approach 2:
The light-shielding element is positioned locally between the light-emitting element and the thin-film transistor, providing light blocking only in the specific region where light leakage would affect the driving element. This local intervention maintains the overall structure and electrical field generation capability while addressing the specific light leakage problem.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The use of a light-shielding element reduces the risk of photocurrent or abnormality in the thin-film transistor caused by light leakage, enhancing the reliability and performance of the display device.
Implementation Method 1
The light-shielding element is disposed between the light-emitting element and the thin-film transistor for blocking a light emitted from the light-emitting element from irradiating the thin-film transistor
Data Source
AI summary
A display device is provided. The display device includes a substrate, a driving layer, a light-emitting element, and a light-shielding element. The substrate has a surface. The driving layer includes a thin-film transistor. The thin-film transistor is disposed on the surface. The light-emitting element has a P-end and an N-end. The light-emitting element is disposed on the driving layer and arranged in such a way that a virtual line connecting the P-end and the N-end is parallel to the surface of the substrate. The light-shielding element is disposed between the light-emitting element and the thin-film transistor for blocking a light emitted from the light-emitting element from irradiating the thin-film transistor.


