Display Pixel TFT Structure for Fast Turn-On and Reliable Switching
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Solution Overview
Problem
Current display devices face challenges in achieving high turn-on speed and reliability for thin film transistors, which are crucial for efficient pixel control in display panels.
Innovation Solution
The design includes a display device with specific configurations of thin film transistors, such as using polysilicon for the first semiconductor pattern and oxide semiconductor with vertical crystals for the second, along with a capacitor and conductive patterns, to enhance turn-on speed and reliability. The manufacturing method involves forming insulation layers, semiconductor patterns, and electrodes in a precise manner to optimize transistor performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional thin film transistor structures are used, then manufacturing is simpler, but turn-on speed and reliability are insufficient
Solution Approach 1:
The transistor structure is divided into two distinct types: first transistors with polysilicon semiconductor patterns and second transistors with oxide semiconductor patterns. This segmentation allows each transistor type to be optimized for specific functions, with polysilicon transistors providing high reliability for critical operations and oxide semiconductor transistors providing fast turn-on speed for switching operations, thereby resolving the contradiction between reliability and structural complexity.
Solution Approach 2:
Different semiconductor materials are used in different local regions of the display device. Polysilicon is used in first transistors where high reliability is required, while oxide semiconductor is used in second transistors where fast turn-on speed is prioritized. This local differentiation of material quality allows the system to achieve overall high reliability without requiring all transistors to have the same complex structure.
2Speed
If oxide semiconductor is used for fast turn-on speed, then switching performance improves, but contact resistance may increase
Solution Approach 1:
A conductive layer is introduced as an intermediary between the oxide semiconductor pattern and the electrodes. This conductive layer serves as a mediator that reduces contact resistance at the interface between the oxide semiconductor and metal electrodes, thereby maintaining the fast turn-on speed advantage of oxide semiconductor while improving contact reliability. The conductive layer acts as a buffer that facilitates efficient charge transfer without requiring direct contact between oxide semiconductor and electrodes.
3Reliability
If multiple insulation layers are added to reduce interference, then signal isolation improves, but manufacturing complexity increases
Solution Approach 1:
Multiple insulation functions are merged into a single insulation layer that simultaneously provides electrical isolation between different transistor components and structural support for subsequent layers. This consolidated insulation layer design achieves effective signal isolation without requiring multiple separate insulation layers, thereby reducing the total number of manufacturing steps and simplifying the overall fabrication process while maintaining reliable signal isolation.
Data Source
AI summary
A display device includes a base substrate, a first transistor, a second transistor, an organic light emitting diode, and a capacitor electrically connected to the first thin film transistor. The first transistor includes a first semiconductor pattern below a first interlayer insulation layer and a first control electrode above the first interlayer insulation layer and below a second interlayer insulation layer. The second transistor includes a second control electrode above the first interlayer insulation layer and below the second interlayer insulation layer. A second semiconductor pattern is above the second interlayer insulation layer.