Display Device Electrostatic Protection Circuit
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Solution Overview
Problem
Display devices face reliability issues due to electrostatic discharge (ESD) during manufacturing, which can damage transistors and insulating layers, leading to display panel deterioration and reduced production yield.
Innovation Solution
The implementation of a display device design that includes a protection circuit with transistors having increased threshold voltage, achieved by applying a predetermined auxiliary voltage to the lower gate electrodes of the transistors, thereby reducing leakage current and noise.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a protection circuit is designed in the display panel to protect against electrostatic discharge, then reliability is improved, but leakage current increases causing noise
Solution Approach 1:
The patent applies a predetermined voltage to the lower gate electrode of the protection transistor, changing the electrical parameter of the gate to increase the threshold voltage. This parameter change reduces the leakage current of the protection transistor from nanometer level to picometer level, thereby reducing noise while maintaining ESD protection capability
Solution Approach 2:
The patent introduces a lower gate electrode as an intermediary control element between the upper gate electrode and the source-drain channel. This lower gate electrode acts as a mediator to independently control the threshold voltage of the protection transistor, enabling precise adjustment of leakage current while maintaining protection function
Data Source
AI summary
A display device including a substrate; a signal line disposed on the substrate and to which a predetermined voltage signal is applied; a power auxiliary line to which a first source voltage is applied; a first driving voltage line to which a first driving voltage higher than the first source voltage is applied; and a first transistor disposed between the signal line and the first driving voltage line. The first transistor includes a first lower gate electrode connected to the power auxiliary line and a first upper gate electrode connected to the signal line.