Display Semiconductor Light Energy Harvesting

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Solution Overview

Problem

Portable display apparatuses face limitations due to the limited power supply from batteries, requiring frequent replacement or recharging to maintain operation over time.

Innovation Solution

A display apparatus design incorporating a substrate with a semiconductor layer, including a channel area, first and second areas, and a gate electrode, where the second area is farther from the channel area, and is electrically connected to a battery and a rectifier circuit, allowing for extended operation using existing battery power by harnessing energy from external light through a P-N junction area.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Duration of action of moving object

If a battery is used as power supply for portable display apparatus, then the apparatus can be portably operated, but the operation time is limited due to limited battery capacity

Engineering Contradiction:
Improveoperation timeVSAvoidbattery capacity
Core Design Contradiction:
Duration of action of moving objectVSQuantity of substance

Solution Approach 1:

The patent combines the battery power supply system with a light-receiving semiconductor layer to create a hybrid power system. The semiconductor layer (second area) is electrically connected to the battery through a charging connection electrode, allowing the device to capture light energy and convert it to electrical energy to supplement battery power, thereby extending operation time without increasing battery capacity.

Inventive Principle:
Principle #5Merging (Combining)

Solution Approach 2:

The semiconductor layer serves multiple functions: it acts as both a component of the display apparatus and a light-receiving energy conversion element. By integrating the light-receiving function into the existing semiconductor structure, the device can simultaneously perform display functions and energy harvesting, extending operational duration using ambient light.

Inventive Principle:
Principle #6Universality (Multi-functionality)

2Use of energy by moving object

If the semiconductor layer is doped to create P-N junction for energy generation, then additional electrical charges are generated from external light, but the device structure becomes more complex

Engineering Contradiction:
Improveenergy generation efficiencyVSAvoidsemiconductor layer structure
Core Design Contradiction:
Use of energy by moving objectVSDevice complexity

Solution Approach 1:

The patent applies different doping types to different regions of the semiconductor layer: the channel area is doped with a first type of dopant while the second area (light-receiving region) is doped with a second type of dopant, creating a P-N junction. This localized differentiation allows efficient energy generation in the second area while maintaining display functionality in the channel area, achieving high energy generation efficiency through strategic local doping rather than uniform complexity throughout the device.

Inventive Principle:
Principle #3Local quality

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

Enables the display apparatus to operate for an extended period using existing battery power by generating additional electrical charges through a P-N junction area, enhancing charging efficiency and reducing the need for frequent battery replacement or recharging.

Implementation Method 1

harnessing energy from external light through a P-N junction area

Methodology Applied
Scientific EffectPhotovoltaic effect: Photovoltaic Effect

Data Source

PatentUS20250098443A1Display apparatus
Publication Date: 2025.03.20 SAMSUNG DISPLAY CO LTD
  • US20250098443A1 patent drawing
  • US20250098443A1 patent drawing
  • US20250098443A1 patent drawing

AI summary

A display apparatus includes a substrate, a semiconductor layer over the substrate, and including a first area, a second area, and a channel area, a gate electrode over the semiconductor layer, and overlapping the channel area, and a pixel electrode electrically connected to the first area that is in one direction from the channel area of the semiconductor layer, wherein the second area is farther than the first area from the channel area.