Display Substrate Channel Pattern and Insulating Pattern Design
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Solution Overview
Problem
The challenge in manufacturing display substrates with oxide semiconductor thin-film transistors (TFTs) is the damage to the oxide semiconductor layer during the formation of source and drain electrodes, which complicates the process and limits the reduction of masks used, thereby affecting the reliability and productivity of the substrate.
Innovation Solution
A display substrate design that includes a channel pattern and an insulating pattern formed using a single mask, with the channel pattern overlapping the input and output electrodes, and a pixel electrode contacting the output electrode through a contact hole in the insulating pattern, minimizing damage to the oxide semiconductor layer and reducing the number of masks required.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If a single mask is used to form the oxide semiconductor layer and source/drain electrodes, then the number of masks is reduced and manufacturing cost decreases, but the oxide semiconductor layer is easily damaged during source and drain electrode formation
Solution Approach 1:
The patent divides the formation process into two separate stages: first forming the oxide semiconductor layer with one mask, then forming the source and drain electrodes with another mask. This segmentation prevents damage to the oxide semiconductor layer during electrode formation while still reducing the total mask count compared to conventional multi-mask processes.
Solution Approach 2:
The oxide semiconductor layer is formed and positioned in advance before the source and drain electrodes are created. This preliminary action ensures the semiconductor layer is already in place and protected, allowing subsequent electrode formation without risking damage to the semiconductor material.
2Reliability
If an etch-stopper is added to protect the oxide semiconductor layer, then the oxide semiconductor layer is protected from damage, but an additional mask is needed which increases manufacturing complexity
Solution Approach 1:
The patent removes the etch-stopper layer from the structure entirely, replacing it with a direct patterning approach. By extracting this protective layer, the design eliminates the need for the additional mask required to form the etch-stopper, thereby reducing manufacturing complexity while maintaining reliability through alternative protective measures in the patterning process.
3Productivity
If the oxide semiconductor layer and source/drain electrodes are formed using a single mask, then the manufacturing process is simplified, but forming the source and drain electrodes becomes more complicated to prevent damage to the oxide semiconductor layer
Solution Approach 1:
The patent segments the electrode formation into distinct steps with separate masking, where the first mask defines the oxide semiconductor layer boundaries and the second mask defines the source and drain electrode positions. This segmentation simplifies each individual step while avoiding the complexity of single-mask multi-function patterning.
Data Source
AI summary
In a display substrate and a method of manufacturing the display substrate, the display substrate includes a data line, a channel pattern, an insulating pattern and a pixel electrode. The data line extends in a direction on a base substrate. The channel pattern is disposed in a separate region between an input electrode connected to the data line and an output electrode spaced apart from the input electrode. The channel pattern makes contact with the input electrode and the output electrode on the input and output electrodes. The insulating pattern is spaced apart from the channel pattern on the base substrate and includes a contact hole exposing the output electrode. The pixel electrode is formed on the insulating pattern to make contact with the output electrode through the contact hole. Thus, a damage of the oxide semiconductor layer may be minimized and a manufacturing process may be simplified.