Display Substrate Compensation Structure for Leakage Reduction

Resolve Bottlenecks,
Find Innovative Solutions
Generate Solutions

Solution Overview

Problem

Low-temperature polycrystalline silicon transistors in organic light-emitting diode displays suffer from significant electric leakage at lower frequencies, leading to poor display effects due to high Ioff values, which affects the gate electrode voltage retention and causes flicker issues.

Innovation Solution

A display substrate with a compensation structure coupled to a compensation signal line, positioned near the driving channel portion of the driving transistor, adjusts the electric field and capacitance to reduce leakage by compensating the gate electrode voltage through adjustable compensation signals, improving voltage retention and display quality at low frequencies.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If low-temperature polycrystalline silicon transistors are used in organic light-emitting diode displays, then the display can achieve high contrast, low power consumption, and light weight, but the transistors suffer from significant electric leakage at lower frequencies due to high Ioff values

Engineering Contradiction:
Improvedisplay qualityVSAvoidelectric leakage
Core Design Contradiction:
ReliabilityVSLoss of energy

Solution Approach 1:

A compensation structure is introduced as an intermediary element between the driving transistor and the gate electrode. This compensation structure receives compensation signals and generates compensating voltages that counteract the electric leakage effects, thereby mediating the harmful Ioff values without requiring changes to the fundamental transistor design

Inventive Principle:
Principle #24Intermediary (Mediator)

Solution Approach 2:

The patent changes the electrical parameters of the gate electrode by applying compensation signals through the compensation structure. This dynamically adjusts the gate voltage to compensate for leakage-induced voltage drops, effectively changing the operating parameters to maintain display quality at low frequencies

Inventive Principle:
Principle #35Parameter changes

2Use of energy by stationary object

If the driving frequency is reduced for low-frequency display, then power consumption decreases, but the high Ioff values cause poor voltage retention and flicker issues

Engineering Contradiction:
Improvepower consumptionVSAvoidgate electrode voltage retention
Core Design Contradiction:
Use of energy by stationary objectVSStability of the object's composition

Solution Approach 1:

The compensation structure performs preliminary action by proactively applying compensation signals before the voltage degradation becomes problematic. This preventive approach counteracts leakage effects in advance, maintaining stable gate voltage retention throughout the display frame period at low frequencies

Inventive Principle:
Principle #10Preliminary action

Solution Approach 2:

The compensation structure implements a feedback mechanism where compensation signals are applied based on the expected leakage behavior. This feedback loop continuously corrects the gate voltage to compensate for Ioff-induced degradation, ensuring stable voltage retention during low-frequency operation

Inventive Principle:
Principle #23Feedback

Data Source

PatentUS20250107358A1Display substrate and display device
Publication Date: 2025.03.27 CHENGDU BOE OPTOELECTRONICS TECH CO LTD
  • US20250107358A1 patent drawing
  • US20250107358A1 patent drawing
  • US20250107358A1 patent drawing

AI summary

The present disclosure provides a display substrate and a display device. The display substrate includes: a base substrate, and a compensation signal line and a plurality of sub-pixels on the base substrate. The sub-pixel includes a sub-pixel driving circuit. The sub-pixel driving circuit includes a driving transistor and a compensation structure. The compensation structure is coupled to the corresponding compensation signal line. An orthographic projection of the compensation structure onto the base substrate is located at a side of an orthographic projection of a gate electrode of the driving transistor onto the base substrate.