Display Substrate Direct Pixel Electrode Contact for Lower Resistance

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Solution Overview

Problem

Current virtual reality LCD products have high resolution but fail to meet customer needs in terms of display effect, likely due to inefficiencies in the connection between pixel electrodes and thin film transistors.

Innovation Solution

A display substrate design that includes a base substrate with pixel units, each comprising a first thin film transistor and a pixel electrode. The pixel electrode is directly and electrically connected to the drain contact region of the thin film transistor through a through hole penetrating the interlayer insulation layer, eliminating the need for a transition electrode and simplifying the manufacturing process.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If a transition electrode is used to connect the pixel electrode to the thin film transistor, then the manufacturing process becomes more complex, but the contact resistance may be abnormal

Engineering Contradiction:
Improvecontact resistanceVSAvoidmanufacturing process complexity
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The patent removes the transition electrode from the structure, establishing a direct connection between the pixel electrode and the drain contact region of the thin film transistor through a through-hole. This extraction of the unnecessary intermediate component simplifies the manufacturing process while ensuring reliable electrical contact without abnormal contact resistance.

Inventive Principle:
Principle #2Taking out (Extraction)

Solution Approach 2:

The patent creates an asymmetric connection structure where the pixel electrode directly contacts the drain contact region through a vertically oriented through-hole, breaking the symmetric multi-layer connection approach. This asymmetric direct connection path reduces the number of interfaces and potential contact resistance points while simplifying the overall manufacturing process.

Inventive Principle:
Principle #4Asymmetry

2Stability of the object's composition

If multiple insulation layers and transition electrodes are used, then the structural integrity is improved, but the manufacturing steps increase

Engineering Contradiction:
Improvestructural integrityVSAvoidmanufacturing efficiency
Core Design Contradiction:
Stability of the object's compositionVSProductivity

Solution Approach 1:

The patent extracts the transition electrode layer from the multi-layer structure, reducing the total number of manufacturing steps. The through-hole directly penetrates the insulation layers to establish contact, maintaining structural integrity while eliminating unnecessary intermediate layers that would require additional deposition and patterning steps.

Inventive Principle:
Principle #2Taking out (Extraction)

Solution Approach 2:

The patent transitions from a horizontal multi-layer connection approach to a vertical through-hole connection approach. By changing the dimensionality of the connection path from lateral to vertical, the patent reduces the number of sequential manufacturing steps while maintaining the structural integrity of the insulation layers.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

Data Source

PatentUS20250040247A1Display substrate, method for manufacturing the same and display panel
Publication Date: 2025.01.30 BOE TECHNOLOGY GROUP CO LTD
  • US20250040247A1 patent drawing
  • US20250040247A1 patent drawing
  • US20250040247A1 patent drawing

AI summary

The present disclosure provides a display substrate, a method for manufacturing the display substrate and a display panel. The display substrate includes: a first semiconductor layer on a base substrate, where an active layer of the first thin film transistor is in the first semiconductor layer, and the active layer of the first thin film transistor at least comprises a channel region and a drain contact region; an interlayer insulation layer on a side of the first semiconductor layer away from the base substrate; and a first conductive layer on a side of the interlayer insulation layer away from the first semiconductor layer, wherein the pixel electrode is located in the first conductive layer, and the pixel electrode in the pixel unit is directly and electrically connected to the drain contact region of the active layer of the first thin film transistor through a through hole.