Display Substrate Insulation Pattern for Fluorine Control
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Solution Overview
Problem
Complex transistor designs in display devices lead to poor transistor characteristics and lesser display device properties due to uncontrolled fluorine flow, necessitating a design that simplifies fluorine flow throughout the transistor.
Innovation Solution
A display substrate with a substrate, a first lower gate electrode, an insulation pattern of silicon nitride, and a first active pattern of oxide semiconductor, where the insulation pattern is patterned to correspond to the lower gate electrode, preventing fluorine from flowing into the channel region while allowing it to flow into the wiring region, thereby enhancing transistor characteristics.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If fluorine is allowed to flow freely throughout the transistor, then the wiring region resistance is reduced, but the channel region becomes conductive due to fluorine contamination
Solution Approach 1:
The gate electrode is divided into two distinct regions: a first gate electrode region that contacts the insulation pattern and a second gate electrode region that is spaced apart from it. This segmentation creates separate fluorine flow paths, allowing fluorine to be excluded from the channel region while still reaching the wiring region, thus resolving the contradiction between preventing channel contamination and maintaining wiring conductivity.
Solution Approach 2:
Different regions of the gate electrode are designed with different spatial relationships to the insulation pattern. The first gate electrode region is in contact with the insulation pattern to block fluorine, while the second gate electrode region is spaced apart to allow fluorine flow. This local differentiation enables selective fluorine distribution, improving transistor characteristics by protecting the channel while benefiting the wiring region.
2Power
If the gate electrode width is increased to improve transistor drive capability, then the current driving ability is enhanced, but the manufacturing precision becomes more difficult to control
Solution Approach 1:
The insulation pattern serves as an intermediary structure between the gate electrode and the active pattern. By controlling the width and position of the insulation pattern rather than directly controlling the entire gate electrode width, the manufacturing process gains a reference structure that simplifies alignment. The gate electrode can be formed with relaxed precision requirements relative to the insulation pattern, which itself is precisely controlled, thus resolving the contradiction between power capability and manufacturing precision.
3Ease of manufacture
If a simple transistor design is used, then the manufacturing process is simplified, but fluorine flow cannot be controlled to improve transistor characteristics
Solution Approach 1:
The gate electrode is segmented into two regions with different spatial relationships to the insulation pattern. This segmentation is achieved through a straightforward formation process where the gate electrode material is deposited and then selectively removed or patterned, creating the first and second gate electrode regions. This simple structural modification enables fluorine flow control without complicating the overall manufacturing process, thus resolving the contradiction between ease of manufacture and transistor characteristics.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution increases the characteristics of the transistor by preventing fluorine from making the channel region conductive and decreasing the resistance of the wiring region, thus improving the overall performance of the display device.
Implementation Method 1
an insulation pattern disposed on the lower gate electrode and patterned to correspond to the lower gate electrode, the insulation pattern including silicon nitride
Data Source
AI summary
The present disclosure relates to a display substrate. The display substrate may include a substrate, a first lower gate electrode, an insulation pattern, a first insulation layer, and a first active pattern. The first lower gate electrode may be disposed on the substrate. The insulation pattern may be disposed on and patterned to correspond to the first lower gate electrode and may include a silicon nitride. The first insulation layer may be disposed on the insulation pattern and may include a silicon oxide. The first active pattern may be on the first insulation layer and formed of oxide semiconductor and may include a first channel region overlapping the first lower gate electrode and a first wiring region disposed on a side of the first channel region.