Display Substrate Parasitic Capacitor Stabilizes Node Potential

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Solution Overview

Problem

Existing display technologies face challenges in stabilizing the potential of key nodes in pixel drive circuits, leading to potential instability and inefficiency in OLED display substrates.

Innovation Solution

The introduction of parasitic capacitors at double-gate intermediate nodes of transistors in the pixel drive circuit helps stabilize the potential of key nodes, reducing reverse leakage and improving the accuracy of driving currents.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If conventional pixel drive circuits are used without additional capacitors, then the circuit structure is simpler, but the potential of key nodes becomes unstable and reverse leakage increases

Engineering Contradiction:
Improvepotential stabilityVSAvoidcircuit structure
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The parasitic capacitor is formed as an unintended byproduct of the transistor fabrication process itself, utilizing the existing conductive layers and semiconductor structure. This self-service approach means the capacitor functionality is achieved without requiring separate manufacturing steps or additional components, thereby stabilizing node potential while maintaining structural simplicity

Inventive Principle:
Principle #25Self-service

Solution Approach 2:

The parasitic capacitor acts as an intermediary element between the gate electrode and source/drain regions, providing the necessary capacitance to stabilize the intermediate node potential. This mediator function is achieved through the inherent capacitive coupling created by the transistor's physical structure during fabrication

Inventive Principle:
Principle #24Intermediary (Mediator)

2Reliability

If parasitic capacitors are introduced at double-gate intermediate nodes, then the potential of key nodes is stabilized and reverse leakage is reduced, but the manufacturing process becomes more complex

Engineering Contradiction:
Improvereverse leakage reductionVSAvoidfabrication process
Core Design Contradiction:
ReliabilityVSEase of manufacture

Solution Approach 1:

The parasitic capacitor is formed as an unintended byproduct of the transistor fabrication process itself, utilizing the existing conductive layers and semiconductor structure. This self-service approach means the capacitor functionality is achieved without requiring separate manufacturing steps or additional components, thereby stabilizing node potential while maintaining structural simplicity

Inventive Principle:
Principle #25Self-service

Solution Approach 2:

The parasitic capacitor, which would normally be considered an unwanted side effect in circuit design, is deliberately utilized and positioned at double-gate intermediate nodes to provide beneficial capacitance for potential stabilization. By converting this previously harmful element into a useful component, the invention reduces reverse leakage without adding manufacturing complexity

Inventive Principle:
Principle #22Blessing in disguise (Convert harm into benefit)

3Reliability

If electrode plates are positioned to overlap with active layers between gate electrodes, then parasitic capacitors are formed for potential stabilization, but the device layout becomes more complex

Engineering Contradiction:
Improvepotential stabilityVSAvoiddevice layout
Core Design Contradiction:
ReliabilityVSShape

Solution Approach 1:

The electrode plates are merged with the existing conductive layer structure of the transistor, combining the capacitor electrode functionality with the transistor's conductive pathways. This merging allows the parasitic capacitor to share the same spatial and structural resources as the transistor components, forming potential stabilization structures without requiring separate, independent layout elements

Inventive Principle:
Principle #5Merging (Combining)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This solution effectively stabilizes the potential of key nodes, reduces leakage, and enhances the display effect by ensuring accurate driving currents and improved display uniformity.

Implementation Method 1

The introduction of parasitic capacitors at double-gate intermediate nodes of transistors in the pixel drive circuit helps stabilize the potential of key nodes

Methodology Applied
Scientific EffectCapacitance: Capacitance

Data Source

PatentUS20250140193A1Display substrate and preparation method thereof, and display apparatus
Publication Date: 2025.05.01 BOE TECHNOLOGY GROUP CO LTD
  • US20250140193A1 patent drawing
  • US20250140193A1 patent drawing
  • US20250140193A1 patent drawing

AI summary

Disclosed are a display substrate and a preparation method thereof, and a display apparatus. The display substrate includes a substrate and a plurality of sub-pixels, at least one sub-pixel includes a pixel drive circuit and a light emitting device connected to the pixel drive circuit, the pixel drive circuit includes a plurality of transistors, wherein at least one transistor includes an active layer and two gate electrodes. The substrate is provided with a semiconductor layer and a plurality of conductive layers disposed on one side of the semiconductor layer away from the substrate, at least one conductive layer is provided with at least one electrode plate, and there is an overlapping region between an orthographic projection of the electrode plate on the substrate and an orthographic projection of the active layer between the two gate electrodes on the substrate.