Display TFT Contact Hole Layout to Prevent Semiconductor Damage
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
The existing manufacturing processes for display devices result in damage to semiconductor elements during the formation of thin film transistors, reducing the reliability and drivability of the devices, and require multiple masks, increasing production costs.
Innovation Solution
A method for manufacturing display devices that minimizes damage to semiconductor elements by forming thin film transistors using different semiconductors in separate layers, reducing the number of masks required and enhancing the reliability and performance of the transistors by using a specific configuration of active layers, insulating layers, and electrode connections.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If contact holes are formed to expose semiconductor layers of thin film transistors in different layers, then electrical connection is achieved, but damage to semiconductor elements occurs reducing reliability
Solution Approach 1:
The patent separates thin film transistors into different vertical layers (first TFT in first layer, second TFT in second layer) and forms contact holes through specific depth ranges to expose only the drain electrode of the lower layer without damaging the semiconductor active layer. This dimensional separation allows electrical connection while avoiding harmful exposure damage to the semiconductor element.
2Manufacturing precision
If multiple masks are used in manufacturing process, then precise patterning is achieved, but production cost increases
Solution Approach 1:
The patent combines multiple patterning functions into a single mask structure. The mask includes a first opening for the first contact hole and a second opening for the second contact hole, allowing both contact holes to be formed in one photolithography step. This merging of multiple patterning operations into one step reduces the number of masks required and lowers production cost while maintaining precise patterning.
3Reliability
If contact holes penetrate deep to expose lower layer electrodes, then electrical connection is established, but semiconductor elements exposed through shallow holes suffer damage
Solution Approach 1:
The patent applies different depth requirements to different contact holes based on their local needs. The first contact hole penetrates through the first insulating layer to expose the drain electrode, while the second contact hole penetrates through the second insulating layer to expose the active layer. Each contact hole has its depth precisely controlled according to the specific local requirement, achieving both electrical connection and avoidance of damage through differentiated depth control.
Data Source
AI summary
Provided are a display device and a method for manufacturing the same. The display device includes: a connection source electrode and a connection drain electrode connected to a first source electrode a the first drain electrode, respectively by penetrating an isolation insulating layer and a second interlayer dielectric layer to enhance a characteristic of an element and reliability of the display device.