Display Panel TFT Protection Using Hydrogen Blocking and Trapping
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Solution Overview
Problem
The use of metal oxide semiconductor materials in thin film transistors for display panels leads to poor stability due to hydrogen atom diffusion, causing threshold voltage drift and poor display performance.
Innovation Solution
A display panel design incorporating a hydrogen blocking portion and a hydrogen trapping portion stacked perpendicular to the substrate, which includes materials like indium gallium zinc oxide for blocking and trapping hydrogen atoms, respectively, to prevent diffusion and improve stability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Speed
If metal oxide semiconductor materials are used to prepare the active layers of thin film transistors, then the mobility of the thin film transistor is improved, but the stability deteriorates due to hydrogen atom diffusion causing threshold voltage drift
Solution Approach 1:
The patent introduces a protective portion comprising a hydrogen blocking layer and a hydrogen trapping layer as an intermediary structure between the external environment and the active layer. The hydrogen blocking layer (e.g., aluminum oxide, titanium oxide) prevents hydrogen atoms from reaching the active layer, while the hydrogen trapping layer (e.g., silicon nitride, phosphosiloxane) captures and retains hydrogen atoms that may penetrate through, thereby protecting the metal oxide semiconductor material from hydrogen-induced degradation while preserving its high mobility characteristics
Solution Approach 2:
The protective portion is formed before the display panel undergoes hydrogen plasma treatment or prolonged operation in hydrogen-containing environments. By pre-establishing the hydrogen blocking and trapping layers, the active layer is protected in advance from hydrogen atom diffusion, preventing threshold voltage drift before it occurs and ensuring long-term stability of the metal oxide semiconductor-based thin film transistor
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The design effectively reduces hydrogen atom diffusion, enhancing the stability and reliability of thin film transistors, thereby improving display yield and performance.
Implementation Method 1
a protective portion disposed on a side of the first insulating layer away from the substrate. An orthographic projection of the protective portion on the substrate at least partially covers an orthographic projection of the active portion on the substrate, and the protective portion includes a hydrogen blocking portion
Implementation Method 2
the protective portion includes a hydrogen blocking portion and a hydrogen trapping portion stacked in a direction perpendicular to the substrate
Data Source
AI summary
Disclosed are a display panel and a display device including a thin film transistor that is disposed on a substrate and includes an active portion. The display panel further includes a first insulating layer disposed on a side of the active portion away from the substrate, and a protective portion disposed on a side of the first insulating layer away from the substrate. An orthographic projection of the protective portion on the substrate at least partially covers an orthographic projection of the active portion on the substrate. The protective portion includes a hydrogen blocking portion and a hydrogen trapping portion stacked in a direction perpendicular to the substrate.