Flexible Display TFT Layout for Low Power and Shared Etching
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Solution Overview
Problem
Current technologies face challenges in manufacturing display devices that can operate with low power consumption, particularly in portable or wearable devices, where energy efficiency is crucial for thinner and lighter designs.
Innovation Solution
The use of a display device structure that incorporates a first thin-film transistor with a polycrystalline semiconductor layer and a second thin-film transistor with an oxide semiconductor layer, along with a protective film of inorganic insulation material to prevent short-circuiting, and forming openings in the bending area to the same depth as contact holes in the active area to simplify the manufacturing process.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Weight of moving object
If a display device is designed for portable or wearable applications, then weight and volume are reduced, but power consumption increases
Solution Approach 1:
The display device is divided into an active area and a bending area, with different structural configurations in each region. The bending area has reduced layer structure and openings to reduce weight while the active area maintains full structure for display function, resolving the contradiction between weight reduction and power consumption maintenance
Solution Approach 2:
Different regions of the display device are given different structural qualities - the active area has complete functional layers for high-performance display, while the bending area has simplified structure with openings to reduce weight. This local differentiation allows the device to be lightweight overall while maintaining display quality where needed
2Ease of manufacture
If openings in bending area are formed to the same depth as contact holes in active area, then manufacturing process is simplified, but structural integrity may be compromised
Solution Approach 1:
The openings in the bending area are formed to the same depth as the contact holes in the active area, allowing both features to be created in a single etching process step. This merging of process parameters simplifies manufacturing while the openings are strategically positioned in the bending area away from critical functional regions, maintaining structural integrity
3Area of stationary object
If high potential supply line and low potential supply line overlap, then area is reduced, but short-circuiting risk increases
Solution Approach 1:
An insulating film is introduced as an intermediary layer between the high potential supply line and low potential supply line where they overlap. This mediator prevents direct electrical contact and potential short-circuiting while allowing the lines to overlap spatially, thus reducing the overall area occupied by the circuitry
Data Source
AI summary
Disclosed is a display device that is capable of being driven with low power consumption. A first thin-film transistor including a polycrystalline semiconductor layer and a second thin-film transistor including an oxide semiconductor layer are disposed in an active area, thereby reducing power consumption. At least one opening formed in a bending area is formed to have the same depth as any one of contact holes formed in the active area, thereby making it possible to form the opening and the contact holes through the same process and consequently simplifying the process of manufacturing the device. Since a high potential supply line and a low potential supply line overlap each other with a protective film formed of an inorganic insulation material interposed therebetween, short-circuiting of the high potential supply line and the low potential supply line may be prevented.