Display Device Through-Electrode Wiring Routing
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Solution Overview
Problem
The existing display device technology, as described in Patent Document 3, faces a limitation in the degree of freedom for wiring routing due to the connection of a through electrode and a source/drain region of a drive transistor, which restricts the flexibility and efficiency of the wiring layout.
Innovation Solution
A display device with a drive substrate that includes a first and second surface, where light emitting elements are on the first surface and drive transistors on the second surface, connected via through electrodes and semiconductor-based connection units on the second surface, allowing for improved routing flexibility by reducing parasitic resistance and leakage current.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a through electrode and source/drain region are connected by wiring, then electrical connection is achieved, but the degree of freedom in wiring routing is decreased
Solution Approach 1:
The patent extracts the connection function from the wiring layer and implements it through through-electrodes that penetrate the insulating layer. This separates the connection function from the routing function, allowing wirings to be routed more freely without being constrained by connection point requirements, thus resolving the contradiction between reliable electrical connection and wiring routing flexibility.
Solution Approach 2:
The patent introduces through-electrodes as intermediary elements that penetrate the insulating layer to establish electrical connections. These through-electrodes act as mediators between different wiring layers, enabling connections without requiring wirings to pass through or around obstacles, thereby maintaining routing freedom while ensuring reliable electrical connection.
2Reliability
If wiring is routed to connect through electrode and source/drain region, then electrical connection is established, but manufacturing yield decreases due to increased complexity
Solution Approach 1:
The patent extracts the connection function from the wiring structure and assigns it to through-electrodes. This simplifies the wiring routing requirements and reduces manufacturing complexity, as through-electrodes can be formed using standard semiconductor fabrication processes, thereby improving manufacturing yield while maintaining reliable electrical connection.
3Reliability
If wiring routing is constrained to connect through electrode and source/drain region, then electrical connection is ensured, but device complexity increases
Solution Approach 1:
The patent extracts the connection function from the wiring layer and implements it through through-electrodes that penetrate the insulating layer. This separation of connection and routing functions significantly reduces wiring routing complexity, as wirings no longer need to be precisely routed to connection points, thereby resolving the contradiction between ensuring electrical connection and reducing device complexity.
Solution Approach 2:
The through-electrodes serve as intermediary connection elements that simplify the wiring network. By providing fixed connection points through the insulating layer, they reduce the complexity of wiring routing while ensuring reliable electrical connection between different layers and components.
Data Source
AI summary
A display device is provided with a drive substrate including a first surface and a second surface, and a plurality of light emitting elements provided on the first surface. The drive substrate is provided with a plurality of drive transistors provided on the second surface and drives the plurality of light emitting elements, respectively, a plurality of through electrodes that penetrates between the first surface and the second surface, and a plurality of connection units provided on the second surface, each of which connects a diffusion layer of each of the drive transistors and each of the through electrodes to each other. The connection unit is provided with a semiconductor layer or a semiconductor compound layer.