Display Transistor Bias Layout for Wider Driving Range
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Solution Overview
Problem
Existing display devices face challenges in improving the driving range and off current characteristics of transistors connected to the gate electrode, which affect the performance and efficiency of the display panel.
Innovation Solution
The display device incorporates a capping layer covering the protrusion of a first transistor and includes a hydrogen passivation layer in direct contact with the semiconductor region of the transistors, along with bias electrodes connected to a driving voltage line, enhancing the driving range and improving off current characteristics.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a capping layer is added to cover the protrusion of the first transistor, then the driving range of the transistor is improved, but the device complexity increases
Solution Approach 1:
The device structure is segmented into multiple functional layers: the capping layer covering the protrusion of the first transistor, the hydrogen passivation layer contacting the semiconductor region, and the bias electrodes. This segmentation allows each layer to perform its specific function independently, improving the driving range while maintaining manageable structural complexity through modular design.
Solution Approach 2:
The capping layer acts as an intermediary element between the protrusion of the first transistor and the surrounding structures. It mediates the electrical field distribution and provides a controlled interface that improves transistor driving range while the hydrogen passivation layer serves as another intermediary to passivate dangling bonds in the semiconductor region.
2Reliability
If a hydrogen passivation layer is added in direct contact with the semiconductor region, then off current characteristics are improved, but the manufacturing process becomes more complex
Solution Approach 1:
The hydrogen passivation layer modifies the physical and chemical parameters of the semiconductor region interface by introducing hydrogen atoms that passivate dangling bonds. This parameter change reduces off current characteristics. The layer is positioned in direct contact with the semiconductor region, and its thickness and composition are optimized to achieve the desired electrical characteristics while maintaining manufacturability.
3Reliability
If bias electrodes are added overlapping the semiconductor region of third transistors, then low frequency characteristics are improved, but the device complexity increases
Solution Approach 1:
The bias electrodes are merged with the gate electrode structure of the third transistors, with the bias electrodes positioned to overlap the semiconductor regions. This merging allows the bias electrodes to be integrated into the existing electrode configuration rather than adding completely separate structures, thereby improving low frequency characteristics while minimizing the increase in device complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution enhances the driving range of the transistors and improves their off current characteristics, leading to more stable and efficient operation of the display device.
Implementation Method 1
a hydrogen passivation layer on the first metal layer, a semiconductor region of each of the first transistor, the third-first transistor, and the third-second transistor on the hydrogen passivation layer
Data Source
AI summary
A display device includes: a light emitting element on a substrate; a third-first transistor and a third-second transistor connected in series between a gate electrode of the first transistor and a drain electrode of the first transistor; a first metal layer on the substrate and comprising a gate electrode of the third-first transistor and a gate electrode of the third-second transistor; a hydrogen passivation layer on the first metal layer; a semiconductor region of each of a first transistor, the third-first transistor, and the third-second transistor on the hydrogen passivation layer; a gate electrode on the capping layer; a first bias electrode on a same layer as the gate electrode of the first transistor and overlapping the semiconductor region of the third-first transistor; and a second bias electrode on a same layer as the first bias electrode and overlapping the semiconductor region of the third-second transistor.