Display Transistor Layout With Hydrogen Passivation for Low Off Current
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Solution Overview
Problem
Existing display devices face challenges in improving the driving range and off current characteristics of transistors connected to the gate electrode, which affect the performance and efficiency of the display.
Innovation Solution
The display device incorporates a capping layer covering the protrusion of a first transistor, with a hydrogen passivation layer in direct contact with the semiconductor region of the transistors, and bias electrodes connected to a driving voltage line to stabilize the electric field, enhancing the driving range and off current characteristics.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a conventional transistor structure is used without additional passivation layers, then the device complexity is reduced, but the off current characteristics and driving range of the transistor deteriorate
Solution Approach 1:
A hydrogen passivation layer is introduced as an intermediary between the semiconductor region and the surrounding environment. This layer mediates the interaction by providing hydrogen atoms that passivate dangling bonds at the semiconductor surface, thereby improving off current characteristics without fundamentally changing the transistor's core structure
Solution Approach 2:
The physical and chemical parameters of the transistor interface are changed by introducing the hydrogen passivation layer. This layer modifies the electrical properties of the semiconductor surface through hydrogenation, changing the interface state density and improving carrier mobility, which enhances both off current characteristics and driving range
2Reliability
If the driving range of the first transistor is improved through structural modifications, then the transistor performance is enhanced, but the manufacturing precision requirements increase
Solution Approach 1:
The transistor structure is segmented into distinct functional layers, with the hydrogen passivation layer being a separate, dedicated component. This segmentation allows each layer to be optimized independently for its specific function while maintaining clear interfaces, reducing the cumulative impact of manufacturing variations
Solution Approach 2:
The hydrogen passivation layer is formed as a preliminary step before subsequent processing steps. By establishing the passivation layer early in the manufacturing process, the foundation for improved transistor performance is set before any potential misalignment or damage could occur in later steps
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The implementation of the capping layer and hydrogen passivation layer improves the driving range and off current characteristics of the transistors, leading to more stable and efficient operation of the display device.
Implementation Method 1
a hydrogen passivation layer disposed on the first metal layer, a semiconductor region of each of the first transistor, the third-first transistor, and the third-second transistor disposed on the hydrogen passivation layer
Data Source
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AI summary
Provided is a display device. The display device comprises a light emitting element disposed on a substrate, a first transistor configured to control a driving current flowing through the light emitting element, a second transistor configured to supply a data voltage to a source electrode of the first transistor, a third-first transistor and a third-second transistor connected in series between a gate electrode of the first transistor and a drain electrode of the first transistor, a first metal layer disposed on the substrate and comprising a gate electrode of the third-first transistor and a gate electrode of the third-second transistor, a hydrogen passivation layer disposed on the first metal layer, a semiconductor region of each of the first transistor, the third-first transistor, and the third-second transistor disposed on the hydrogen passivation layer, a capping layer disposed on the semiconductor region of the first transistor, a gate electrode of the first transistor disposed on the capping layer, a first bias electrode disposed on the same layer as the gate electrode of the first transistor and overlapping the semiconductor region of the third-first transistor, and a second bias electrode disposed on the same layer as the first bias electrode and overlapping the semiconductor region of the third-second transistor.