Mixed-Oxide and Polysilicon Display Transistor Layout
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
The complexity of manufacturing processes for display devices is increased due to the use of different types of transistors in the display region and the driving circuit of the gate electrode, requiring repetitive chemical vapor deposition and complicating the overall configuration without improving transistor properties.
Innovation Solution
A display device design that incorporates both polysilicon and metal oxide transistors, with specific layer structures and interlayer relationships to simplify the manufacturing process and maintain desired transistor properties, including a substrate with gate electrodes, insulating layers, source and drain electrodes, and a display medium layer.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If different types of transistors are used in the display region and driving circuit, then transistor performance can be optimized, but manufacturing process complexity increases
Solution Approach 1:
The patent divides the transistor structure into distinct segments: a first transistor type for the display region and a second transistor type for the driving circuit region. This segmentation allows each transistor type to be optimized independently for its specific application while maintaining separate manufacturing processes, thus resolving the contradiction between performance optimization and process complexity.
Solution Approach 2:
The patent applies local quality by using different semiconductor materials (polysilicon for display region, metal oxide for driving circuit) in different regions of the display device. This allows each region to have the specific material properties needed for optimal performance, while the overall device structure maintains consistency to manage manufacturing complexity.
2Reliability
If different types of transistors are used in the display region and driving circuit, then transistor performance can be optimized, but the overall configuration becomes complicated
Solution Approach 1:
The patent segments the display device into distinct functional regions with different transistor types: display region transistors and driving circuit transistors. This segmentation allows for optimized performance in each region while maintaining clear boundaries that simplify the overall configuration management.
Solution Approach 2:
Different semiconductor materials are applied locally to different regions: polysilicon in the display region and metal oxide in the driving circuit region. This local differentiation optimizes transistor performance for each specific application while keeping the overall device configuration organized and manageable.
Data Source
AI summary
A display device is disclosed, which includes: a substrate; a first transistor disposed on the substrate; and a second transistor disposed on the substrate. The first transistor includes: a first active layer; a first electrode and a second electrode electrically connecting to the first active layer; and a conducting layer at least partially covering one of the first electrode and the second electrode. The second transistor includes a second active layer. Herein, one of the first active layer and the second active layer includes a polysilicon layer, and the other one of the first active layer and the second active layer includes a metal oxide layer.