Dual-Active-Pattern Display Transistor for Resistance Stability
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Solution Overview
Problem
Existing display devices face challenges in preventing the increase in resistance of active patterns, which affects the performance and efficiency of image display, particularly due to the differences in voltage levels applied to various lines and active patterns.
Innovation Solution
A display device configuration that includes a transistor with a first active pattern made of silicon-based semiconductor material and a second active pattern made of oxide-based semiconductor material, where signals of different levels are applied to the lines to form positive and negative fields, and additional lines are used to manage initialization voltages, ensuring that the resistance of the second active pattern does not increase.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a single active pattern is used in the transistor, then the device structure is simple, but the resistance of the active pattern increases during operation
Solution Approach 1:
The active pattern is divided into two distinct segments: a first active pattern made of silicon-based semiconductor material and a second active pattern made of oxide-based semiconductor material. Each segment serves a specific function in managing voltage levels and preventing resistance increase, thereby improving reliability without requiring a completely new transistor architecture.
Solution Approach 2:
The transistor employs a composite structure combining two different semiconductor materials: silicon-based semiconductor material for the first active pattern and oxide-based semiconductor material for the second active pattern. This composite approach leverages the complementary properties of each material to maintain stable resistance characteristics during operation.
2Illumination intensity
If different voltage levels are applied to lines, then the field formation is optimized, but the resistance of active patterns increases
Solution Approach 1:
Different regions of the transistor are assigned different semiconductor materials based on their specific functional requirements. The first active pattern uses silicon-based material optimized for certain voltage conditions, while the second active pattern uses oxide-based material optimized for other voltage conditions. This local optimization allows the device to handle different voltage levels effectively without causing resistance increase in either region.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration effectively prevents the increase in resistance of the second active pattern, enhancing the performance and efficiency of the display device by managing voltage levels and field formations.
Implementation Method 1
a signal applied to the first line forms a negative field, and a signal applied to the second line forms a positive field
Data Source
AI summary
A display device includes a transistor disposed on a substrate and including a first active pattern, a second active pattern electrically connected to the transistor, a first line disposed on the second active pattern, and a second line disposed under the second active pattern and partially overlapping the first line.