High-Definition Display Transistor Stacked Structure

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Solution Overview

Problem

Current display apparatuses, particularly for extended reality applications, face challenges in achieving high definition, resolution, and reliability while maintaining high display quality and yield in manufacturing.

Innovation Solution

The display apparatus incorporates a transistor with a specific structure including a semiconductor layer, conductive layers, and insulating layers, along with a light-emitting device featuring an EL layer between pixel and common electrodes, optimized for high-density and high-reliability performance through a stacked-layer structure and nitrogen content in insulating layers.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If conventional transistor structures are used, then device complexity is reduced, but manufacturing precision and reliability deteriorate

Engineering Contradiction:
Improvetransistor fabrication precisionVSAvoidtransistor structure complexity
Core Design Contradiction:
Manufacturing precisionVSDevice complexity

Solution Approach 1:

The transistor structure is divided into multiple segments with distinct functions: the first conductive layer forms source/drain regions, the second conductive layer forms gate electrodes, and the semiconductor layer forms channel regions. This segmentation allows precise control of each component's position and dimensions, achieving high manufacturing precision while maintaining manageable structural complexity through modular design.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The patent introduces a vertical stacking arrangement where conductive layers and semiconductor layers are positioned at different heights. The first conductive layer is at a lower level while the second conductive layer is at a higher level, creating a three-dimensional structure. This dimensional change enables precise alignment and connection through openings in insulating layers, significantly improving manufacturing precision without proportionally increasing planar complexity.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

2Manufacturing precision

If light-emitting device structure is simplified, then device complexity is reduced, but display quality and definition deteriorate

Engineering Contradiction:
Improvelight-emitting device fabrication precisionVSAvoidlight-emitting device structure complexity
Core Design Contradiction:
Manufacturing precisionVSDevice complexity

Solution Approach 1:

The light-emitting device employs a nested structure where the EL layer is positioned between the pixel electrode and common electrode, with the pixel electrode connected to the second conductive layer through openings in multiple insulating layers. This nested arrangement allows precise positioning of the light-emitting layer while maintaining a compact overall structure, improving display quality without excessive complexity.

Inventive Principle:
Principle #7Nested doll (Nesting)

Solution Approach 2:

The patent applies local quality by creating specific opening patterns in the insulating layers at precise locations. The first opening reaches the first conductive layer and the second opening reaches the second conductive layer, with these openings positioned to align with specific conductive regions. This localized precision enables high-definition display while keeping the overall device structure manageable.

Inventive Principle:
Principle #3Local quality

3Productivity

If manufacturing process is simplified, then ease of manufacture is improved, but productivity and yield deteriorate

Engineering Contradiction:
Improvedisplay apparatus manufacturing yieldVSAvoidmanufacturing process complexity
Core Design Contradiction:
ProductivityVSEase of manufacture

Solution Approach 1:

The patent performs preliminary actions by forming the first conductive layer, second conductive layer, and semiconductor layer in a predetermined sequence with specific openings created in advance. The insulating layers are positioned to cover specific regions before subsequent layers are deposited. This preliminary arrangement of components and openings streamlines subsequent manufacturing steps, improving productivity and yield while maintaining reasonable process complexity.

Inventive Principle:
Principle #10Preliminary action

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This configuration enables the production of high-definition, high-resolution display apparatuses with enhanced reliability and quality, supporting efficient manufacturing processes.

Implementation Method 1

Light-emitting devices utilizing an electroluminescence (hereinafter referred to as EL) phenomenon

Methodology Applied
Scientific EffectElectroluminescence: Electroluminescence

Data Source

PatentUS20250098439A1Display apparatus
Publication Date: 2025.03.20 SEMICON ENERGY LAB CO LTD
  • US20250098439A1 patent drawing
  • US20250098439A1 patent drawing
  • US20250098439A1 patent drawing

AI summary

A display apparatus with high definition is provided. The display apparatus includes a transistor, a light-emitting device and a first insulating layer. The transistor includes a semiconductor layer, first to third conductive layers, and second and third insulating layers. The second insulating layer is provided over the first conductive layer and includes a first opening reaching the first conductive layer. The second conductive layer is provided over the second insulating layer and includes a second opening in a region overlapping with the first opening. The semiconductor layer is in contact with the top surface of the first conductive layer, the side surface of the second insulating layer, and the top surface and the side surface of the second conductive layer. The third insulating layer is provided over the semiconductor layer. The third conductive layer is provided over the third insulating layer. The first insulating layer is provided over the transistor. The first insulating layer and the third insulating layer include a third opening reaching the second conductive layer. The light-emitting device is provided over the first insulating layer and includes a pixel electrode, a common electrode, and an EL layer. The pixel electrode is electrically connected to the second conductive layer through the third opening. The EL layer includes a region in contact with the top surface and the side surface of the pixel electrode.