Display Transmission Hole Structure for Under-Panel Optical Components
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Display devices face challenges in achieving improved light transmittance and optical functions in transmission areas, particularly in component areas where additional functions beyond image display are integrated, such as sensors or cameras, without compromising image quality or increasing device complexity.
Innovation Solution
The display device incorporates a substrate with a component area and a display area, featuring a thin-film transistor structure with silicon and oxide semiconductor layers, an intermediate insulating layer, and a conductive pattern, along with a transmission hole in the second insulating layer that exposes the upper surface of the intermediate insulating layer, enhancing light transmittance and optical functions in the transmission area.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If a conventional thin-film transistor structure is used in the component area, then the device can integrate additional functions (sensors, cameras), but the light transmittance and optical quality in the transmission area deteriorate due to refraction and diffuse reflection
Solution Approach 1:
The patent applies local quality by creating a transmission area within the component area that has different structural characteristics. The transmission hole in the second insulating layer and the exposed intermediate insulating layer surface create a localized region with optimized optical properties (reduced refraction and diffuse reflection) while the rest of the component area maintains the conventional TFT structure for functional integration.
2Reliability
If the second insulating layer is made thicker to improve device performance, then the electrical insulation is improved, but the light transmittance in the transmission area worsens due to increased thickness
Solution Approach 1:
The patent segments the second insulating layer by creating a transmission hole that exposes the intermediate insulating layer. This segmentation allows the second insulating layer to maintain its full thickness for electrical insulation in non-transmission areas, while the transmission hole creates a localized path with reduced total thickness for light transmission, thus resolving the contradiction between insulation thickness and light transmittance.
3Ease of manufacture
If conventional insulating layer structures are used, then the manufacturing process is simple, but the optical functions in the transmission area are compromised due to refraction and diffuse reflection
Solution Approach 1:
The patent applies preliminary action by forming the transmission hole and exposing the intermediate insulating layer surface during the manufacturing process, before final assembly. This preliminary structural modification ensures that the optical path is optimized from the beginning, preventing refraction and diffuse reflection issues without requiring complex post-processing or additional manufacturing steps.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration improves light transmittance in the transmission area, reducing refraction and diffuse reflection, thereby enhancing optical functions while maintaining image quality and integrating additional components like sensors or cameras effectively.
Implementation Method 1
improves light transmittance in the transmission area, reducing refraction and diffuse reflection
Implementation Method 2
improves light transmittance in the transmission area, reducing refraction and diffuse reflection
Data Source
AI summary
A display device is disclosed that includes: a substrate comprising a display area and a component area including a transmission area; a first thin-film transistor comprising a first semiconductor layer and a first gate electrode, the first semiconductor layer including a silicon semiconductor; a first insulating layer covering the first gate electrode; a second thin-film transistor comprising a second semiconductor layer arranged on the first insulating layer and a second gate electrode, the second semiconductor layer including an oxide semiconductor; a second insulating layer covering the second gate electrode and having a transmission hole overlapping the transmission area; an intermediate insulating layer between the first insulating layer and the second insulating layer; a conductive pattern between the intermediate insulating layer and the first insulating layer; and a display element arranged on the second insulating layer, wherein the transmission hole exposes an upper surface of the intermediate insulating layer.